Datasheet > CMPA5585025D

CMPA5585025D

更新时间： 2024-09-27 20:00:07

品牌	Logo	应用领域
科锐 - CREE		高功率电源射频微波
页数	文件大小	规格书
7页	280K
描述
Wide Band High Power Amplifier, 5500MHz Min, 8500MHz Max, 0.188 X 0.142 INCH, 0.004 INCH HEIGHT, DIE-10

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技术参数
数据手册

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CMPA5585025D 技术参数

生命周期：	Active	包装说明：	0.188 X 0.142 INCH, 0.004 INCH HEIGHT, DIE-10
Reach Compliance Code：	unknown	风险等级：	5.71
特性阻抗：	50 Ω	构造：	COMPONENT
增益：	30 dB	最大工作频率：	8500 MHz
最小工作频率：	5500 MHz	射频/微波设备类型：	WIDE BAND HIGH POWER
端子面层：	NICKEL/GOLD	最大电压驻波比：	5
Base Number Matches：	1

CMPA5585025D 数据手册

CMPA5585025D

25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Ampliﬁer

Cree’s CMPA5585025D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based

monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or

gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher

thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to

Si and GaAs transistors. This MMIC contains a two-stage reactively matched ampliﬁer design approach

enabling very wide bandwidths to be achieved.

Typical Performance Over 5.5-8.5 GHz (T_C= 25˚C)

Parameter

5.5 GHz

6.5 GHz

7.5 GHz

8.5 GHz

Units

Small Signal Gain

P_OUT@ P_IN= 24 dBm

Power Gain @ P_IN= 24 dBm

PAE @ P_IN= 24 dBm

Features

Applications

• 30 dB Small Signal Gain

• 40 W Typical P_SAT

• Point to Point Radio

• Communications

• Operation up to 28 V

• High Breakdown Voltage

• Test Instrumentation

• EMC Ampliﬁer Drivers

• High Temperature Operation

• Size 0.142 x 0.188 x 0.004 inches

Subject to change without notice.

www.cree.com/wireless

12 3 4 5 6 7

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