Datasheet > CMPA5259025F

CMPA5259025F

更新时间： 2024-09-28 01:25:15

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
11页	796K
描述
25 W, 5200 - 5900 MHz, 28 V, GaN MMIC for Radar Power Amplifiers

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

CMPA5259025F 数据手册

CMPA5259025F

25 W, 5200 - 5900 MHz, 28 V, GaN MMIC for Radar Power Ampliﬁers

Cree’s CMPA5259025F is a gallium nitride (GaN) High Electron

Mobility Transistor (HEMT) designed speciﬁcally for high

eﬃciency, high gain, and wide bandwidth capabilities, which

makes CMPA5259025F ideal for 5.2 - 5.9 GHz Radar ampliﬁer

applications. The transistor is supplied in a ceramic/metal ﬂange

package.

Typical Performance Over 5.2-5.9 GHz (T_C= 25˚C) of Demonstration Ampliﬁer

Parameter

5.2 GHz

5.5 GHz

5.9 GHz

Units

Small Signal Gain

33.6

31.9

32.2

Output Power

Eﬃciency

38.5

53.5

-13.5

39.6

51.3

-15.5

34.8

47.2

-4.8

Input Return Loss

Note:

100 μsec Pulse Width, 10% Duty Cycle, P_IN= 22 dBm

Features

Applications

• Radar

• 30 dB Small Signal Gain

• 50% Eﬃciency at P_SAT

• Operation up to 28 V

• High Breakdown Voltage

Subject to change without notice.

www.cree.com/rf

12 3 4 5 6 7...11

中文翻译

下载PDF

与CMPA5259025F相关器件

型号	品牌	获取价格	描述	数据表
CMPA5259030D	CREE	获取价格	RF/Microwave Amplifier,
CMPA5259050	MACOM	获取价格	50 W; 5200 - 5900 MHz; 28 V; GaN MMIC for Radar Power Amplifiers
CMPA5259050D	CREE	获取价格	RF/Microwave Amplifier,
CMPA5259050F	CREE	获取价格	50 W, 5200 - 5900 MHz, 28 V, GaN MMIC for Radar Power Amplifiers
CMPA5259080	MACOM	获取价格	High power C-band MMIC for pulsed radar operation.
CMPA5585025D	CREE	获取价格	Wide Band High Power Amplifier, 5500MHz Min, 8500MHz Max, 0.188 X 0.142 INCH, 0.004 INCH H
CMPA5585025F	CREE	获取价格	25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier
CMPA5585025F-AMP	CREE	获取价格	25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier
CMPA5585025F-TB	CREE	获取价格	25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier
CMPA5585030	MACOM	获取价格	30 W; 5.5 - 8.5 GHz; GaN MMIC Power Amplifier