Datasheet > CMPA3135060S

CMPA3135060S

更新时间： 2024-09-28 15:19:23

品牌	Logo	应用领域
MACOM		/
页数	文件大小	规格书
16页	1582K
描述
3.1 - 3.5 GHz; 60 W; Packaged GaN MMIC Power Amplifier

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CMPA3135060S 数据手册

CMPA3135060S

3.1 - 3.5 GHz, 60 W, Packaged GaN MMIC

Power Ampliﬁer

Description

The CMPA3135060S is a gallium nitride (GaN) High Electron Mobility Transistor

(HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior

properties compared to silicon or gallium arsenide, including higher breakdown

voltage, higher saturated electron drif velocity and higher thermal conductivity.

This MMIC power ampliꢀier contains a two-stage reactively matched ampliꢀier design

approach, enabling high power and power added eﬀiciency to be achieved in a 7mm

x 7mm, surꢀace mount (QFN package). The MMIC is designed ꢀor S-Band radar power

ampliꢀier applications.

Package Type: 7x7 QFN

PN: CMPA3135060S

Typical Performance Over 3.1 - 3.5 GHz (T_C= 25ºC)

Parameter

3.1 GHz

3.3 GHz

3.5 GHz

Units

Small Signal Gain^{1, 2}

Output Power^{1, 3}

Power Gain^{1, 3}

Power Added Eﬀiciency^{1, 3}

Notes:

¹V_DD= 50 V, I_DQ= 260 mA

²Measured at P_IN= -20 dBm

³Measured at P_IN= 20 dBm and 300μs; Duty Cycle = 20%

Features

Applications

•

3.1 - 3.5 GHz Operation

•

Air Traﬀic Control Radar

75 W Typical Output Power

29 dB Power Gain

Deꢀense Surveillance Radar

Fire Control Radar

50-ohm Matched ꢀor Ease oꢀ Use

Plastic Surꢀace-Mount Package,

7x7 mm QFN

Military Air, Land and Sea Radar

Weather Radar

Note:

Features are typical perꢀormance across ꢀrequency under 25°C operation.

Please reꢀerence perꢀormance charts ꢀor additional details.

MACOM Technology Solutions Inc. (MACOM) and its aﬃliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

Rev. 1.0, 2022-8-25

For further information and support please visit:

https://www.macom.com/support

12 3 4 5 6 7...16

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