Datasheet > CMPA2738060F

CMPA2738060F

更新时间： 2024-11-18 20:08:07

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
10页	1707K
描述
RF/Microwave Amplifier,

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技术参数
数据手册

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CMPA2738060F 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.72
Base Number Matches：	1

CMPA2738060F 数据手册

CMPA2738060F

60 W, 2.7 - 3.8 GHz, GaN MMIC, Power Ampliﬁer

Cree’s CMPA2738060F is a gallium nitride (GaN) High Electron Mobility Transistor

(HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior

properties compared to silicon or gallium arsenide, including higher breakdown

voltage, higher saturated electron drift velocity and higher thermal conductivity.

GaN HEMTs also offer greater power density and wider bandwidths compared

to Si and GaAs transistors. This MMIC contains a two-stage reactively matched

ampliﬁer design approach enabling very wide bandwidths to be achieved. This

MMIC enables extremely wide bandwidths to be achieved in a small footprint

screw-down package.

Typical Performance Over 2.7 - 3.8 GHz (T_C= 25˚C)

Parameter

2.7 GHz

34.9

88.0

27.5

2.9 GHz

34.6

86.5

27.4

3.1 GHz

33.8

88.0

27.5

3.5 GHz

35.2

3.8 GHz

34.2

Units

Small Signal Gain

Output Power¹

Power Gain¹

78.0

85.0

27.9

28.3

PAE¹

54.5

52.5

Note¹: P_IN= 20 dBm

Features

Applications

•

34 dB Small Signal Gain

•

Civil and Military Pulsed Radar Ampliﬁers

85 W Typical P_SAT

Operation up to 50 V

High Breakdown Voltage

•

High Temperature Operation

0.5” x 0.5” Total Product Size

Subject to change without notice.

www.cree.com/rf

12 3 4 5 6 7...10

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