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CMPA2735015D PDF预览

CMPA2735015D

更新时间: 2024-11-21 01:25:55
品牌 Logo 应用领域
科锐 - CREE /
页数 文件大小 规格书
9页 537K
描述
15 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier

CMPA2735015D 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknown风险等级:5.69
Base Number Matches:1

CMPA2735015D 数据手册

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CMPA2735015D  
15 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier  
Cree’s CMPA2735015D is a gallium nitride (GaN) High Electron Mobil
Transistor (HEMT) based monolithic microwave integrated circuit (MMIC
GaN has superior properties compared to silicon or gallium arsenide, includin
higher breakdown voltage, higher saturated electron drift velocity and highe
thermal conductivity. GaN HEMTs also offer greater power density and wide
bandwidths compared to Si and GaAs transistors. This MMIC contains a  
two-stage reactively matched amplifier design approach enabling very wide  
bandwidths to be achieved.  
Typical Performance Over 2.7-3.5 GHz (TC = 25˚C)  
Parameter  
2.7 GHz  
36  
2.9 GHz  
35  
3.1 GHz  
35  
3.3 GHz  
35  
3.5 GHz  
35  
Units  
dB  
W
Small Signal Gain  
Output Power1  
Power Gain1  
PAE1  
20  
22  
26  
27  
26  
27  
27  
28  
28  
28  
dB  
%
51  
57  
54  
52  
52  
Note1: PIN = 16 dBm, Pulse Width = 500 μs; Duty Cycle = 10%  
Features  
Applications  
35 dB Small Signal Gain  
20 W Typical PSAT  
Civil and Military Pulsed Radar Amplifiers  
Operation up to 50 V  
High Breakdown Voltage  
High Temperature Operation  
Size 0.118 x 0.071 x 0.004 inches  
Subject to change without notice.  
www.cree.com/wireless  
1

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