Datasheet > CMPA2735015D

CMPA2735015D

更新时间： 2024-11-02 01:25:55

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
9页	537K
描述
15 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier

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CMPA2735015D 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.69
Base Number Matches：	1

CMPA2735015D 数据手册

CMPA2735015D

15 W, 2.7 - 3.5 GHz, GaN MMIC, Power Ampliﬁer

Cree’s CMPA2735015D is a gallium nitride (GaN) High Electron Mobility

Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).

GaN has superior properties compared to silicon or gallium arsenide, including

higher breakdown voltage, higher saturated electron drift velocity and higher

thermal conductivity. GaN HEMTs also offer greater power density and wider

bandwidths compared to Si and GaAs transistors. This MMIC contains a

two-stage reactively matched ampliﬁer design approach enabling very wide

bandwidths to be achieved.

Typical Performance Over 2.7-3.5 GHz (T_C= 25˚C)

Parameter

2.7 GHz

2.9 GHz

3.1 GHz

3.3 GHz

3.5 GHz

Units

Small Signal Gain

Output Power¹

Power Gain¹

PAE¹

Note¹: P_IN= 16 dBm, Pulse Width = 500 μs; Duty Cycle = 10%

Features

Applications

•

35 dB Small Signal Gain

20 W Typical P_SAT

•

Civil and Military Pulsed Radar Ampliﬁers

Operation up to 50 V

High Breakdown Voltage

•

High Temperature Operation

Size 0.118 x 0.071 x 0.004 inches

Subject to change without notice.

www.cree.com/wireless

12 3 4 5 6 7...9

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