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CMPA2735075D

更新时间: 2024-11-18 21:19:23
品牌 Logo 应用领域
科锐 - CREE 高功率电源射频微波
页数 文件大小 规格书
7页 325K
描述
Narrow Band High Power Amplifier, 2700MHz Min, 3500MHz Max, DIE-10

CMPA2735075D 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:DIE-10Reach Compliance Code:unknown
风险等级:5.66特性阻抗:50 Ω
构造:COMPONENT增益:24 dB
最大工作频率:3500 MHz最小工作频率:2700 MHz
射频/微波设备类型:NARROW BAND HIGH POWER端子面层:NICKEL/GOLD
最大电压驻波比:5Base Number Matches:1

CMPA2735075D 数据手册

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CMPA2735075D  
75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier  
Cree’s CMPA2735075D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based  
monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or  
gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher  
thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to  
Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach  
enabling very wide bandwidths to be achieved.  
Typical Performance Over 2.7-3.5 GHz (TC = 25˚C)  
Parameter  
2.7 GHz  
2.9 GHz  
3.1 GHz  
30  
3.3 GHz  
29  
3.5 GHz  
Units  
dB  
Small Signal Gain  
Saturated Output Power, PSAT  
28  
67  
22  
48  
30  
85  
24  
59  
28  
94  
24  
61  
1
101  
25  
103  
25  
W
1
Power Gain @ PSAT  
dB  
1
PAE @ PSAT  
61  
61  
%
Note1: PSAT is defined as the RF output power where the device starts to draw positive gate current in the range of 2-8 mA.  
Features  
Applications  
28 dB Small Signal Gain  
Civil and Military Pulsed Radar  
Amplifiers  
80 W Typical PSAT  
Operation up to 28 V  
High Breakdown Voltage  
High Temperature Operation  
Size 0.197 x 0.174 x 0.004 inches  
Subject to change without notice.  
www.cree.com/wireless  
1

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