Datasheet > CMPA2735075D

CMPA2735075D

更新时间： 2024-11-01 21:19:23

品牌	Logo	应用领域
科锐 - CREE		高功率电源射频微波
页数	文件大小	规格书
7页	325K
描述
Narrow Band High Power Amplifier, 2700MHz Min, 3500MHz Max, DIE-10

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技术参数
数据手册

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CMPA2735075D 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	DIE-10	Reach Compliance Code：	unknown
风险等级：	5.66	特性阻抗：	50 Ω
构造：	COMPONENT	增益：	24 dB
最大工作频率：	3500 MHz	最小工作频率：	2700 MHz
射频/微波设备类型：	NARROW BAND HIGH POWER	端子面层：	NICKEL/GOLD
最大电压驻波比：	5	Base Number Matches：	1

CMPA2735075D 数据手册

CMPA2735075D

75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Ampliﬁer

Cree’s CMPA2735075D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based

monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or

gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher

thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to

Si and GaAs transistors. This MMIC contains a two-stage reactively matched ampliﬁer design approach

enabling very wide bandwidths to be achieved.

Typical Performance Over 2.7-3.5 GHz (T_C= 25˚C)

Parameter

2.7 GHz

2.9 GHz

3.1 GHz

3.3 GHz

3.5 GHz

Units

Small Signal Gain

Saturated Output Power, P_SAT

101

103

Power Gain @ P_SAT

PAE @ P_SAT

Note¹: P_SATis deﬁned as the RF output power where the device starts to draw positive gate current in the range of 2-8 mA.

Features

Applications

• 28 dB Small Signal Gain

• Civil and Military Pulsed Radar

Ampliﬁers

• 80 W Typical P_SAT

• Operation up to 28 V

• High Breakdown Voltage

• High Temperature Operation

• Size 0.197 x 0.174 x 0.004 inches

Subject to change without notice.

www.cree.com/wireless

12 3 4 5 6 7

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