Datasheet > CMPA2735075F1

CMPA2735075F1

更新时间： 2023-12-18 00:00:00

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
10页	1157K
描述
RF/Microwave Amplifier,

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技术参数
数据手册

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CMPA2735075F1 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.64	Base Number Matches：	1

CMPA2735075F1 数据手册

CMPA2735075F1

75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Ampliﬁer

Cree’s CMPA2735075F1 is a gallium nitride (GaN) High Electron Mobility Transistor

(HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior

properties compared to silicon or gallium arsenide, including higher breakdown

voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN

HEMTs also offer greater power density and wider bandwidths compared to Si and

GaAs transistors. This MMIC contains a two-stage reactively matched ampliﬁer

design approach enabling very wide bandwidths to be achieved.

Typical Performance Over 2.7-3.5 GHz (T_C= 25˚C)

Parameter

2.7 GHz

2.9 GHz

3.1 GHz

3.3 GHz

3.5 GHz

Units

Small Signal Gain

Saturated Output Power

PAE @ P_SAT

Note: P_IN= 28 dBm

Features

Applications

•

29 dB Small Signal Gain

•

Civil and Military Pulsed Radar Ampliﬁers

76 W Typical P_SAT

28 V Operation

High Breakdown Voltage

•

High Temperature Operation

0.5” x 0.5” Total Product Size

Subject to change without notice.

www.cree.com/rf

12 3 4 5 6 7...10

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