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CMPA2735075F

更新时间: 2024-11-01 21:19:51
品牌 Logo 应用领域
科锐 - CREE 高功率电源射频微波
页数 文件大小 规格书
9页 1771K
描述
Narrow Band High Power Amplifier, 2700MHz Min, 3500MHz Max, 0.500 X 0.500 INCH, 780019, 6 PIN

CMPA2735075F 技术参数

生命周期:ActiveReach Compliance Code:unknown
风险等级:5.64构造:MODULE
增益:26 dB最大工作频率:3500 MHz
最小工作频率:2700 MHz射频/微波设备类型:NARROW BAND HIGH POWER
端子面层:NICKEL/GOLD最大电压驻波比:5
Base Number Matches:1

CMPA2735075F 数据手册

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CMPA2735075F  
75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier  
Cree’s CMPA2735075F is a gallium nitride (GaN) High Electron Mobili
Transistor (HEMT) based monolithic microwave integrated circu
(MMIC). GaN has superior properties compared to silicon or gallium  
arsenide, including higher breakdown voltage, higher saturated electro
drift velocity and higher thermal conductivity. GaN HEMTs also offe
greater power density and wider bandwidths compared to Si and GaA
transistors. This MMIC contains a two-stage reactively matched amplifier  
design approach enabling very wide bandwidths to be achieved. This  
MMIC enables extremely wide bandwidths to be achieved in a small  
footprint screw-down package.  
Typical Performance Over 2.7-3.5 GHz (TC = 25˚C)  
Parameter  
2.7 GHz  
2.9 GHz  
3.1 GHz  
3.3 GHz  
3.5 GHz  
Units  
dB  
Small Signal Gain  
Saturated Output Power, PSAT  
27  
59  
21  
43  
29  
76  
23  
54  
29  
89  
24  
56  
28  
90  
24  
56  
27  
83  
23  
56  
1
W
1
Power Gain @ PSAT  
dB  
1
PAE @ PSAT  
%
Note1: PSAT is defined as the RF output power where the device starts to draw positive gate current in the range of 2-8 mA.  
Features  
Applications  
27 dB Small Signal Gain  
Civil and Military Pulsed Radar  
Amplifiers  
80 W Typical PSAT  
Operation up to 28 V  
High Breakdown Voltage  
High Temperature Operation  
0.5” x 0.5” Total Product Size  
Subject to change without notice.  
www.cree.com/rf  
1

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