Datasheet > CMPA2735030

CMPA2735030

更新时间： 2024-09-27 15:19:47

品牌	Logo	应用领域
MACOM		/
页数	文件大小	规格书
9页	407K
描述
30 W, 2.7 - 3.5 GHz, 50 V, GaN MMIC Power Amplifier

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CMPA2735030 数据手册

CMPA2735030D

30 W, 2.7 - 3.5 GHz, GaN MMIC, Power Ampliﬁer

Description

The CMPA2735030D is a gallium nitride (GaN) high electron mobility

transistor (HEMT) based monolithic microwave integrated circuit

(MMIC). GaN has superior properties compared to silicon or gallium

arsenide, including higher breakdown voltage, higher saturated electron

drif velocity and higher thermal conductivity. GaN HEMTs also oﬀer

greater power density and wider bandwidths compared to Si and GaAs

transistors. This MMIC contains a two-stage reactively matched ampliꢀier

design approach enabling very wide bandwidths to be achieved.

Features

Applications

•

33 dB small signal gain

Operation up to 50 V

High breakdown voltage

High temperature operation

Size 0.130 x 0.08 x 0.004 inches

•

Civil and military pulsed radar ampliꢀiers

Typical Performance Over 2.7 - 3.5 GHz (T_C= 25 °C)

Parameter

Small Signal Gain

Output Power¹

Power Gain¹

PAE¹

2.7 GHz

32.4

2.9 GHz

3.1 GHz

33.3

3.3 GHz

3.5 GHz

33.5

Units

33.1

33.3

–

26.0

27.4

26.6

50.8

53.8

54.3

Note:

¹P_IN= 19 dBm, pulse width = 100 μs; duty cycle = 10%.

MACOM Technology Solutions Inc. (MACOM) and its aﬃliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

Rev. 0.0, SEPTEMBER 2023

For further information and support please visit:

https://www.macom.com/support

12 3 4 5 6 7...9

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