Datasheet > CMPA2735030D

CMPA2735030D

更新时间： 2024-09-27 01:25:55

品牌	Logo	应用领域
科锐 - CREE		高功率电源射频微波
页数	文件大小	规格书
9页	529K
描述
30 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier

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CMPA2735030D 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.69	射频/微波设备类型：	NARROW BAND HIGH POWER
Base Number Matches：	1

CMPA2735030D 数据手册

CMPA2735030D

30 W, 2.7 - 3.5 GHz, GaN MMIC, Power Ampliﬁer

Cree’s CMPA2735030D is a gallium nitride (GaN) High Electron Mobility

Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).

GaN has superior properties compared to silicon or gallium arsenide,

including higher breakdown voltage, higher saturated electron drift velocity

and higher thermal conductivity. GaN HEMTs also offer greater power

density and wider bandwidths compared to Si and GaAs transistors. This

MMIC contains a two-stage reactively matched ampliﬁer design approach enabling

very wide bandwidths to be achieved.

Typical Performance Over 2.7-3.5 GHz (T_C= 25˚C)

Parameter

2.7 GHz

2.9 GHz

3.1 GHz

3.3 GHz

3.5 GHz

Units

Small Signal Gain

Output Power¹

Power Gain¹

PAE¹

Note¹: P_IN= 18 dBm, Pulse Width = 500 μs; Duty Cycle = 10%

Features

Applications

•

35 dB Small Signal Gain

40 W Typical P_SAT

•

Civil and Military Pulsed Radar Ampliﬁers

Operation up to 50 V

High Breakdown Voltage

•

High Temperature Operation

Size 0.130 x 0.08 x 0.004 inches

Subject to change without notice.

www.cree.com/wireless

12 3 4 5 6 7...9

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