Datasheet > CMPA2060025D

CMPA2060025D

更新时间： 2024-02-04 04:50:42

品牌	Logo	应用领域
科锐 - CREE		高功率电源射频微波
页数	文件大小	规格书
7页	498K
描述
Wide Band High Power Amplifier, 2000MHz Min, 6000MHz Max, DIE-10

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技术参数
数据手册

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CMPA2060025D 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.72
特性阻抗：	50 Ω	构造：	COMPONENT
增益：	25 dB	最大工作频率：	6000 MHz
最小工作频率：	2000 MHz	射频/微波设备类型：	WIDE BAND HIGH POWER
端子面层：	NICKEL/GOLD	最大电压驻波比：	5
Base Number Matches：	1

CMPA2060025D 数据手册

PRELIMINARY

CMPA2060025D

25 W, 2.0 - 6.0 GHz, GaN MMIC, Power Ampliﬁer

Cree’s CMP2060025D is a gallium nitride (GaN) High Electron Mobility

Transistor (HEMT) based monolithic microwave integrated circuit

(MMIC). GaN has superior properties compared to silicon or gallium

arsenide, including higher breakdown voltage, higher saturated

electron drift velocity and higher thermal conductivity. GaN HEMTs

also offer greater power density and wider bandwidths compared to

Si and GaAs transistors. This MMIC contains a two-stage reactively

matched ampliﬁer design approach enabling very wide bandwidths to

be achieved.

Typical Performance Over 2.0-6.0 GHz (T_C= 25˚C)

Parameter

2.0 GHz

3.0 GHz

4.0 GHz

5.0 GHz

6.0 GHz

Units

Small Signal Gain

Saturated Output Power, P_SAT

Power Gain @ P_OUT= 44 dBm

PAE @ P_OUT44 dBm

Note¹: P_SATis deﬁned as the RF output power where the device starts to draw positive gate current in the range of 2-8 mA. Typical

Data with 50Ω output load. Output transformer can improve performance.

Features

Applications

• 21 dB Small Signal Gain

• Ultra Broadband Drivers

• Fiber Drivers

• 23 W Typical P_SAT

• Operation up to 28 V

• High Breakdown Voltage

• Test Instrumentation

• EMC Ampliﬁer Drivers

• High Temperature Operation

• Size 0.142 x 0.144 x 0.004 inches

Subject to change without notice.

www.cree.com/wireless

12 3 4 5 6 7

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