Datasheet > CMPA2735015

CMPA2735015

更新时间： 2024-11-02 17:02:11

品牌	Logo	应用领域
MACOM		/
页数	文件大小	规格书
9页	473K
描述
15 W, 2.7 to 3.5 GHz, 50 V, GaN MMIC Power Amplifier

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CMPA2735015 数据手册

CMPA2735015D

15 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier

Description

The CMPA2735015D is a gallium nitride (GaN) high electron mobility transistor

(HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior

properties compared to silicon or gallium arsenide, including higher breakdown

voltage, higher saturated electron drif velocity, and higher thermal conductivity.

GaN HEMTs also oﬀer greater power density and wider bandwidths compared

to Si and GaAs transistors. This MMIC contains a two-stage reactively matched

ampliꢀier design approach enabling very wide bandwidths to be achieved.

Features

Applications

•

35 dB small signal gain

20 W typical P_SAT

Operation up to 50 V

High breakdown voltage

High temperature operation

Size 0.118 x 0.071 x 0.004 inches

•

Civil and military pulsed radar ampliꢀiers

Typical Performance Over 2.7-3.5 GHz (T_C= 25 °C)

Parameter

Small Signal Gain

Output Power¹

Power Gain¹

PAE¹

2.7 GHz

2.9 GHz

3.1 GHz

3.3 GHz

3.5 GHz

Units

Note:

¹P_IN= 16 dBm, pulse width = 500 μs; duty cycle = 10%.

MACOM Technology Solutions Inc. (MACOM) and its aﬃliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

Rev. 1.4, SEPTEMBER 2023

For further information and support please visit:

https://www.macom.com/support

12 3 4 5 6 7...9

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