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CMPA2560025F-AMP PDF预览

CMPA2560025F-AMP

更新时间: 2024-11-02 01:11:43
品牌 Logo 应用领域
科锐 - CREE /
页数 文件大小 规格书
11页 955K
描述
25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier

CMPA2560025F-AMP 数据手册

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CMPA2560025F  
25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier  
Cree’s CMPA2560025F is a gallium nitride (GaN) High Electron Mobili
Transistor (HEMT) based monolithic microwave integrated circuit (MMIC
GaN has superior properties compared to silicon or gallium arsenide, includin
higher breakdown voltage, higher saturated electron drift velocity and highe
thermal conductivity. GaN HEMTs also offer greater power density and wide
bandwidths compared to Si and GaAs transistors. This MMIC contains a  
two-stage reactively matched amplifier enabling very wide bandwidths to  
be achieved in a small footprint screw-down package featuring a Copper-  
Tungsten heat-sink.  
Typical Performance Over 2.5-6.0 GHz (TC = 25˚C)  
Parameter  
2.5 GHz  
27.5  
4.0 GHz  
24.3  
6.0 GHz  
23.1  
Units  
dB  
W
Gain  
1
Saturated Output Power, PSAT  
Power Gain @ POUT 43 dBm  
PAE @ POUT 43 dBm  
35.8  
37.5  
25.6  
23.1  
20.9  
16.3  
dB  
%
31.5  
32.8  
30.7  
Note1: PSAT is defined as the RF output power where the device starts to draw positive gate current in the range of 7-13 mA.  
Features  
Applications  
24 dB Small Signal Gain  
Ultra Broadband Amplifiers  
25 W Typical PSAT  
Fiber Drivers  
Operation up to 28 V  
Test Instrumentation  
EMC Amplifier Drivers  
High Breakdown Voltage  
High Temperature Operation  
Subject to change without notice.  
www.cree.com/rf  
1

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