Datasheet > CMPA2560025F-TB

CMPA2560025F-TB

更新时间： 2024-11-02 01:11:43

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
11页	955K
描述
25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier

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CMPA2560025F-TB 数据手册

CMPA2560025F

25 W, 2500 - 6000 MHz, GaN MMIC Power Ampliﬁer

Cree’s CMPA2560025F is a gallium nitride (GaN) High Electron Mobility

Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).

GaN has superior properties compared to silicon or gallium arsenide, including

higher breakdown voltage, higher saturated electron drift velocity and higher

thermal conductivity. GaN HEMTs also offer greater power density and wider

bandwidths compared to Si and GaAs transistors. This MMIC contains a

two-stage reactively matched ampliﬁer enabling very wide bandwidths to

be achieved in a small footprint screw-down package featuring a Copper-

Tungsten heat-sink.

Typical Performance Over 2.5-6.0 GHz (T_C= 25˚C)

Parameter

2.5 GHz

27.5

4.0 GHz

24.3

6.0 GHz

23.1

Units

Gain

Saturated Output Power, P_SAT

Power Gain @ P_OUT43 dBm

PAE @ P_OUT43 dBm

35.8

37.5

25.6

23.1

20.9

16.3

31.5

32.8

30.7

Note¹: P_SATis deﬁned as the RF output power where the device starts to draw positive gate current in the range of 7-13 mA.

Features

Applications

•

24 dB Small Signal Gain

•

Ultra Broadband Ampliﬁers

25 W Typical P_SAT

Fiber Drivers

Operation up to 28 V

Test Instrumentation

EMC Ampliﬁer Drivers

High Breakdown Voltage

High Temperature Operation

Subject to change without notice.

www.cree.com/rf

12 3 4 5 6 7...11

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