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CMPA2060035F PDF预览

CMPA2060035F

更新时间: 2024-11-01 21:22:15
品牌 Logo 应用领域
科锐 - CREE 高功率电源放大器射频微波功率放大器
页数 文件大小 规格书
8页 678K
描述
RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER,

CMPA2060035F 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknown风险等级:5.72
Base Number Matches:1

CMPA2060035F 数据手册

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CMPA2060035F  
35 W, 2.0 - 6.0 GHz, GaN MMIC Power Amplifier  
Cree’s CMPA2060035F is a gallium nitride (GaN) High Electron Mobility  
Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).  
GaN has superior properties compared to silicon or gallium arsenide, including  
higher breakdown voltage, higher saturated electron drift velocity and higher  
thermal conductivity. GaN HEMTs also offer greater power density and wider  
bandwidths compared to Si and GaAs transistors. This MMIC contains a  
two-stage reactively matched amplifier enabling very wide bandwidths to  
be achieved in a small footprint screw-down package featuring a Copper-  
Tungsten heat-sink.  
Typical Performance Over 2.0-6.0 GHz (TC = 25˚C)  
Parameter  
2.0 GHz  
25.6  
27.4  
17.4  
33  
4.0 GHz  
28.5  
54  
6.0 GHz  
26.8  
37  
Units  
dB  
W
Small Signal Gain  
Output Power1  
Power Gain1  
20.3  
47.2  
18.7  
34.2  
dB  
%
Power Added Efficiency1  
Note1: VDD = 32 V, IDQ = 1.2 A, PIN = 27 dBm. All data tested CW  
Features  
Applications  
28 dB Small Signal Gain  
Ultra Broadband Amplifiers  
Fiber Drivers  
35 W Typical PSAT  
Operation up to 32 V  
Test Instrumentation  
EMC Amplifier Drivers  
High Breakdown Voltage  
High Temperature Operation  
Subject to change without notice.  
www.cree.com/rf  
1

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