Datasheet > CMPA2560025D

CMPA2560025D

更新时间： 2024-02-29 08:21:55

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
9页	550K
描述
25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier

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CMPA2560025D 数据手册

CMPA2560025D

25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Ampliﬁer

Cree’s CMP2560025D is a gallium nitride (GaN) High Electron Mobility

Transistor (HEMT) based monolithic microwave integrated circuit

(MMIC). GaN has superior properties compared to silicon or gallium

arsenide, including higher breakdown voltage, higher saturated

electron drift velocity and higher thermal conductivity. GaN HEMTs

also offer greater power density and wider bandwidths compared to

Si and GaAs transistors. This MMIC contains a two-stage reactively

matched ampliﬁer design approach enabling very wide bandwidths to

be achieved.

Typical Performance Over 2.5-6.0 GHz (T_C= 25˚C)

Parameter

2.5 GHz

27.5

4.0 GHz

24.3

6.0 GHz

23.1

Units

Gain

Saturated Output Power, P_SAT

35.8

37.5

25.6

Power Gain @ P_OUT= 43 dBm

PAE @ P_OUT43 dBm

23.1

20.9

16.3

31.5

32.8

30.7

Note¹: P_SATis deﬁned as the RF output power where the device starts to draw positive gate current in the range of 7-13 mA.

Features

Applications

• 24 dB Small Signal Gain

• Ultra Broadband Ampliﬁers

• Fiber Drivers

• 25 W Typical P_SAT

• Operation up to 28 V

• High Breakdown Voltage

• Test Instrumentation

• EMC Ampliﬁer Drivers

• High Temperature Operation

• Size 0.180 x 0.145 x 0.004 inches

Subject to change without notice.

www.cree.com/rf

12 3 4 5 6 7...9

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