Datasheet > CMPA2560025F

CMPA2560025F

更新时间： 2024-09-27 01:24:11

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
10页	630K
描述
CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier

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CMPA2560025F 数据手册

CMPA2560025F

25 W, 2500 - 6000 MHz, GaN MMIC Power Ampliﬁer

Cree’s CMPA2560025F is a gallium nitride (GaN) High Electron Mobility

Transistor (HEMT) based monolithic microwave integrated circuit

(MMIC). GaN has superior properties compared to silicon or gallium

arsenide, including higher breakdown voltage, higher saturated

electron drift velocity and higher thermal conductivity. GaN HEMTs

also offer greater power density and wider bandwidths compared to

Si and GaAs transistors. This MMIC contains a two-stage reactively

matched ampliﬁer enabling very wide bandwidths to be achieved in

a small footprint screw-down package featuring a Copper-Tungsten

heat-sink.

Typical Performance Over 2.5-6.0 GHz (T_C= 25˚C)

Parameter

2.5 GHz

27.5

4.0 GHz

24.3

6.0 GHz

23.1

Units

Gain

Saturated Output Power, P_SAT

Power Gain @ P_OUT43 dBm

PAE @ P_OUT43 dBm

35.8

37.5

25.6

23.1

20.9

16.3

31.5

32.8

30.7

Note¹: P_SATis deﬁned as the RF output power where the device starts to draw positive gate current in the range of 7-13 mA.

Features

Applications

• 24 dB Small Signal Gain

• Ultra Broadband Ampliﬁers

• Fiber Drivers

• 25 W Typical P_SAT

• Operation up to 28 V

• High Breakdown Voltage

• High Temperature Operation

• Test Instrumentation

• EMC Ampliﬁer

Drivers

Subject to change without notice.

www.cree.com/rf

12 3 4 5 6 7...10

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