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CMPA2560025

更新时间: 2024-11-02 15:19:15
品牌 Logo 应用领域
MACOM /
页数 文件大小 规格书
11页 623K
描述
25 W; 2.5 - 6.0 GHz; GaN MMIC Power Amplifier

CMPA2560025 数据手册

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CMPA2560025D  
25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier  
Description  
The CMPA2560025D is a gallium nitride (GaN) High Electron Mobility Transistor  
(HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior  
properties compared to silicon or gallium arsenide, including higher breakdown  
voltage, higher saturated electron drif velocity and higher thermal conductivity.  
GaN HEMTs also offer greater power density and wider bandwidths compared to Si  
and GaAs transistors. This MMIC contains a two-stage reactively matched ampliꢀier  
design approach enabling very wide bandwidths to be achieved.  
PN: CMPA2560025D  
Typical Performance Over 2.5-6.0 GHz (TC = 25ºC)  
Parameter  
2.5 GHz  
27.5  
4.0 GHz  
24.3  
6.0 GHz  
23.1  
Units  
dB  
Gain  
1
Saturated Output Power, PSAT  
Power Gain @ POUT = 43 dBm  
PAE @ POUT 43 dBm  
35.8  
37.5  
25.6  
W
23.1  
20.9  
16.3  
dB  
31.5  
32.8  
30.7  
%
Note: PSAT is deꢀined as the RF output power where the device starts to draw positive gate current in the range oꢀ 7-13 mA  
Features  
Applications  
24 dB Small Signal Gain  
Ultra Broadband Ampliꢀiers  
25 W Typical PSAT  
Fiber Drivers  
Operation up to 28 V  
Test Instrumentation  
EMC Ampliꢀier Drivers  
High Breakdown Voltage  
High Temperature Operation  
Size 0.180 x 0.145 x 0.004 inches  
1
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.  
Visit www.macom.com for additional data sheets and product information.  
Rev. 2.3, 2022-12-13  
For further information and support please visit:  
https://www.macom.com/support  

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