Datasheet > CMPA1D1E030D

CMPA1D1E030D

更新时间： 2022-02-26 14:21:14

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
6页	595K
描述
30 W, 13.75 - 14.5 GHz, 40 V, GaN MMIC, Power Amplifier

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CMPA1D1E030D 数据手册

PRELIMINARY

CMPA1D1E030D

30 W, 13.75 - 14.5 GHz, 40 V, GaN MMIC, Power Ampliﬁer

Cree’s CMPA1D1E030D is a gallium nitride (GaN) High Electron Mobility

Transistor (HEMT) based monolithic microwave integrated circuit

(MMIC) on a silicon carbide substrate, using a 0.25 μm gate length

fabrication process. GaN-on-SiC has superior properties compared

to silicon, gallium arsenide or GaN-on-Si, including higher breakdown voltage,

higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer

greater power density and wider bandwidths compared to Si, GaAs, and GaN-on-Si transistors.

Typical Performance Over 13.75-14.5 GHz (T_C= 25˚C)

Parameter

13.75 GHz

14.0 GHz

14.5 GHz

Units

Small Signal Gain

P_SAT@ P_IN= 26 dBm

P_3dBBackoff @ P_IN= 20 dBm

PAE @ P_IN= 26 dBm

PAE @ P_IN= 20 dBm

Note: All data in this table is based on ﬁxtured, CW performance.

Features

Applications

•ꢀ Satellite Communications Uplink

•ꢀ 27 dB Small Signal Gain

•ꢀ 30 W Typical P_SAT

•ꢀ Operation up to 40 V

•ꢀ High Breakdown Voltage

•ꢀ High Temperature Operation

Subject to change without notice.

www.cree.com/rf

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