Datasheet > CMPA1D1E030

CMPA1D1E030

更新时间： 2024-03-03 10:10:20

品牌	Logo	应用领域
MACOM		/
页数	文件大小	规格书
7页	391K
描述
30 W; 13.75 to 14.5 GHz; 40 V; GaN MMIC Power Amplifier

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CMPA1D1E030 数据手册

CMPA1D1E030D

30 W, 13.75 - 14.5 GHz, 40 V GaN MMIC,

Power Ampliﬁer

Description

The CMPA1D1E030D is a gallium nitride (GaN) High Electron Mobility

Transistor (HEMT) based monolithic microwave integrated circuit

(MMIC) on a Silicon Carbide substrate, using a 0.25 μm gate length

fabrication process. GaN-on-SiC has superior properties compared to

silicon, gallium arsenide or GaN-on-Si, including higher breakdown

voltage, higher saturated electron driꢀ velocity and higher thermal

conductivity. GaN HEMTs also oﬀer greater power density and wider

bandwidths compared to Si, GaAs, and GaN-on-Si transistors.

PN: CMPA1D1E030D

Typical Performance Over 13.75-14.5 GHz (T_C= 25ºC)

Parameter

13.75 GHz

14.0 GHz

14.5 GHz

Units

Small Signal Gain

P_SAT@ P_IN= 26 dBm

P_3dBBackoﬀ @ P_IN= 20 dBm

PAE @ P_IN= 26 dBm

PAE @ P_IN= 20 dBm

Note: All data in this table is based on fixtured, CW performance

Features

Applications

•

27 dB Small Signal Gain

30 W Typical P_SAT

Operation up to 40 V

High Breakdown Voltage

High Temperature Operation

•

Satellite Communications Uplink

MACOM Technology Solutions Inc. (MACOM) and its aﬃliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

Rev. 2.0, 2022-9-20

For further information and support please visit:

https://www.macom.com/support

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