CMPA1D1E025F
25 W, 13.75 - 14.5 GHz, 40 V, Ku-Band GaN MMIC, Power Amplifier
Cree’s CMPA1D1E025F is a gallium nitride (GaN) High Electron Mobility Transistor
(HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon
carbide (SiC) substrate, using a 0.25 μm gate length fabrication process. The Ku
Band 25W MMIC is targeted for commercial Ku Band satellite communications
applications. It offers high gain and superior efficiency while meets OQPSK
linearity required for Satcom applications at 3dB backed off Psat operations.
This Ku Band MMIC is available in a 10 lead, 25 mm x 9.9 mm metal/ceramic
flanged package.
Typical Performance Over 13.75-14.5 GHz (TC = 25˚C)
Parameter
13.75 GHz
14.0 GHz
24.5
23
14.25 GHz
14.5 GHz
Units
dB
W
Small Signal Gain
Linear Output Power
Power Gain
24
24
21
22
24.5
21
24
20
20
18
21
20
dB
%
Power Added Efficiency
20
18
Note1: Measured at -30 dBc, 1.6 MHz from carrier, in the CMPA1D1E025F-AMP under OQPSK modulation, 1.6 Msps, PN23, Alpha
Filter = 0.2.
Features
Applications
•
Satellite Communications Uplink
•
•
•
•
•
24 dB Small Signal Gain
40 W Typical Pulsed PSAT
Operation up to 40 V
20 W linear power under OQPSK
Class A/B high gain, high efficiency 50 ohm MMIC Ku
Band high power amplifier
Subject to change without notice.
www.cree.com/rf
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