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CMPA1C1D060D

更新时间: 2024-11-02 01:25:55
品牌 Logo 应用领域
科锐 - CREE /
页数 文件大小 规格书
8页 549K
描述
60 W, 12.7 - 13.25 GHz, 40 V, GaN MMIC, Power Amplifier

CMPA1C1D060D 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:unknown
风险等级:5.72Base Number Matches:1

CMPA1C1D060D 数据手册

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CMPA1C1D060D  
60 W, 12.7 - 13.25 GHz, 40 V, GaN MMIC, Power Amplifier  
Cree’s CMPA1C1D060D is a gallium nitride (GaN) High Electron Mobility  
Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a  
silicon carbide substrate, using a 0.25 μm gate length fabrication process. GaN-  
on-SiC has superior properties compared to silicon, gallium arsenide or GaN-on-  
Si, including higher breakdown voltage, higher saturated electron drift velocity and  
higher thermal conductivity. GaN HEMTs also offer greater power density and wider  
bandwidths compared to Si, GaAs, and GaN-on-Si transistors.  
Typical Performance Over 12.7-13.25 GHz (TC = 25˚C)  
Parameter  
12.7 GHz  
26.5  
65  
13.0 GHz  
26.2  
63  
13.25 GHz  
Units  
dB  
W
Small Signal Gain  
PSAT @ PIN = 28 dBm  
PAE @ PIN = 28 dBm  
26  
60  
27  
29  
28  
%
Note: All data in this table is based on fixtured, CW performance.  
Features  
Applications  
Satellite Communications Uplink  
26 dB Small Signal Gain  
PTP Radio  
60 W Typical PSAT  
Operation up to 40 V  
High Breakdown Voltage  
High Temperature Operation  
Size 0.209 x 0.240 x 0.004 inches  
Subject to change without notice.  
www.cree.com/rf  
1

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