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CMPA1D1E025 PDF预览

CMPA1D1E025

更新时间: 2024-12-01 17:02:03
品牌 Logo 应用领域
MACOM /
页数 文件大小 规格书
19页 1501K
描述
25 W; 13.75 to 14.5 GHz; 40 V; Ku-Band GaN MMIC Power Amplifier

CMPA1D1E025 数据手册

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CMPA1D1E025F  
25 W, 13.75 - 14.5 GHz, 40 V, Ku-Band GaN MMIC,  
Power Amplifier  
Description  
PN: CMPA1D1E025F  
Package Type: 440213  
The CMPA1D1E025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based  
monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate, using a 0.25  
μm gate length fabrication process. The Ku-Band 25W MMIC is targeted for commercial Ku-Band  
satellite communications applications. It offers high gain and superior efficiency while meeting  
OQPSK linearity required for Satcom applications at 3dB backed off PSAT operations. This Ku-  
Band MMIC is available in a 10 lead, 25 mm x 9.9 mm metal/ceramic flanged package.  
Typical Performance Over 13.75-14.5 GHz (TC = 25ºC)  
Parameter  
13.75 GHz  
14.0 GHz  
14.25 GHz  
14.5 GHz  
Units  
dB  
Small Signal Gain  
Linear Output Power  
Power Gain  
24  
24  
21  
22  
24.5  
23  
24.5  
21  
24  
20  
20  
18  
W
21  
20  
dB  
Power Added Efficiency  
20  
18  
%
Note:  
1 Measured at -30 dBc, 1.6 MHz from carrier, in the CMPA1D1E025F-AMP under OQPSK modulation, 1.6 Msps, PN23, Alpha Filter = 0.2  
Features  
Applications  
24 dB Small Signal Gain  
Satellite Communication Uplink  
40 W Typical Pulsed PSAT  
Operation up to 40 V  
20 W linear power under OQPSK  
Class A/B high gain, high efficiency 50 ohm MMIC  
Ku-Band high power amplifier  
1
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.  
Visit www.macom.com for additional data sheets and product information.  
Rev. 2.3, 2022-12-13  
For further information and support please visit:  
https://www.macom.com/support  

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