Datasheet > AOD417

AOD417

更新时间： 2024-09-16 17:15:47

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
6页	434K
描述
种类:P-Channel;漏源电压（Vdss）:-30V;持续漏极电流（Id）（在25°C时）:-25A;Vgs(th)(V):±20;漏源导通电阻:34mΩ@-10V

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AOD417 数据手册

AOD417

UMW

-30V P-Channel MOSFET

General Description

The AOD417 uses advanced technology to

provide excellent R_DS(ON), low gate charge and

low gate resistance. ellent thermal resistance

of the DPAK package, this device is well

suited for high current load applications.

Features

•

V_DS(V) =-30V

I_D=-25A (V_GS= 10V)

•

R_DS(ON)<34mΩ (V _GS=- 10V)

R_DS(ON)<55mΩ (V _GS=- 4.5V)

RoHS Compliant

Halogen Free*

Absolute Maximum Ratings T =25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

-30

Gate-Source Voltage

V_GS

±20

-25

T_A=25°C

Continuous Drain

Current ^B,G

T_A=100°C

I_D

-20

Pulsed Drain Current ^C

Avalanche Current ^C

Repetitive avalanche energy L=0.3mH ^C

I_DM

I_AR

E_AR

-60

-14

T_C=25°C

Power Dissipation ^B

T_C=100°C

P_D

T_A=25°C

2.5

P_DSM

°C

Power Dissipation ^A

1.6

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 175

Thermal Characteristics

Parameter

Symbol

Typ

16.7

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Case ^D

t ≤ 10s

R_θJA

Steady-State

R_θJC

2.5

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6

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