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AOD4184A PDF预览

AOD4184A

更新时间: 2024-09-13 12:51:35
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管PC
页数 文件大小 规格书
6页 237K
描述
40V N-Channel MOSFET

AOD4184A 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:compliant风险等级:1.38
Samacsys Confidence:4Samacsys Status:Released
Samacsys PartID:4433100Samacsys Pin Count:3
Samacsys Part Category:MOSFET (N-Channel)Samacsys Package Category:Other
Samacsys Footprint Name:TO252 DPAK_1Samacsys Released Date:2019-12-10 15:35:27
Is Samacsys:NBase Number Matches:1

AOD4184A 数据手册

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AOD4184A  
40V N-Channel MOSFET  
General Description  
Product Summary  
VDS  
The AOD4184A combines advanced trench MOSFET  
technology with a low resistance package to provide  
extremely low RDS(ON). This device is well suited for high  
current load applications.  
40V  
50A  
ID (at VGS=10V)  
< 7mΩ  
RDS(ON) (at VGS=10V)  
< 9.5mΩ  
RDS(ON) (at VGS = 4.5V)  
100% UIS Tested  
100% Rg Tested  
TO252  
DPAK  
D
Top View  
Bottom View  
D
D
G
S
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
40  
V
V
VGS  
ID  
IDM  
IDSM  
Gate-Source Voltage  
Continuous Drain  
Current G  
±20  
50  
TC=25°C  
TC=100°C  
40  
A
A
Pulsed Drain Current C  
120  
13  
TA=25°C  
TA=70°C  
Continuous Drain  
Current  
Avalanche Current C  
Avalanche energy L=0.1mH C  
10  
IAS, IAR  
35  
A
EAS, EAR  
61  
mJ  
TC=25°C  
50  
PD  
W
Power Dissipation B  
Power Dissipation A  
TC=100°C  
TA=25°C  
TA=70°C  
25  
2.3  
PDSM  
W
1.5  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 175  
°C  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
18  
Max  
22  
55  
3
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
t 10s  
RθJA  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Case  
44  
Steady-State  
Steady-State  
RθJC  
2.4  
Rev0 : Sep 2009  
www.aosmd.com  
Page 1 of 6  

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