Datasheet > AOD420_08

AOD420_08

更新时间： 2024-09-15 12:24:51

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
5页	571K
描述
N-Channel Enhancement Mode Field Effect Transistor

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中文翻译

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AOD420_08 数据手册

AOD420

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

TheꢀAOD420ꢀusesꢀadvancedꢀtrenchꢀtechnologyꢀto

provideꢀexcellentꢀR_DS(ON)ꢀandꢀlowꢀgateꢀcharge.ꢀThis

deviceꢀisꢀsuitableꢀforꢀuseꢀasꢀaꢀloadꢀswitchꢀorꢀinꢀPWM

applications.

V_DSꢀ(V)ꢀ=ꢀ30V

I_Dꢀ=ꢀ10Aꢀ(V_GSꢀ=ꢀ10V)

R_DS(ON)ꢀ<ꢀ28mΩꢀ(V_GSꢀ=ꢀ10V)

R_DS(ON)ꢀ<ꢀ42mΩꢀ(V_GSꢀ=ꢀ4.5V)

ꢀꢀꢀꢀꢀꢁRoHSꢀCompliant

ꢀꢀꢀꢀꢀꢁHalogenꢀFree*

100% UIS Tested!

100% Rg Tested!

TO-252

D-PAK

Bottom View

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

DrainꢁSourceꢀVoltage

GateꢁSourceꢀVoltage

V_DS

±20

V_GS

T_C=25°C

ContinuousꢀDrain

Currentꢀ^G

T_C=100°C

I_D

PulsedꢀDrainꢀCurrentꢀ^C

AvalancheꢀCurrentꢀ^C

RepetitiveꢀavalancheꢀenergyꢀL=0.1mHꢀ^C

I_DM

I_AR

E_AR

T_C=25°C

PowerꢀDissipationꢀ^B

T_C=100°C

P_D

T_A=25°C

2.5

P_DSM

PowerꢀDissipationꢀ^A

1.6

T_A=70°C

JunctionꢀandꢀStorageꢀTemperatureꢀRange

T_J,ꢀT_STG

ꢁ55ꢀtoꢀ175

°C

Thermal Characteristics

Parameter

Symbol

Typ

16.7

Max

Units

°C/W

MaximumꢀJunctionꢁtoꢁAmbientꢀ^A

tꢀꢀ≤ꢀ10s

SteadyꢁState

R_θJA

MaximumꢀJunctionꢁtoꢁCaseꢀ^B

R_θJC

1.9

2.5

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5

中文翻译

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