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AOD420_08 PDF预览

AOD420_08

更新时间: 2024-11-18 12:24:51
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管
页数 文件大小 规格书
5页 571K
描述
N-Channel Enhancement Mode Field Effect Transistor

AOD420_08 数据手册

 浏览型号AOD420_08的Datasheet PDF文件第2页浏览型号AOD420_08的Datasheet PDF文件第3页浏览型号AOD420_08的Datasheet PDF文件第4页浏览型号AOD420_08的Datasheet PDF文件第5页 
AOD420  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
TheꢀAOD420ꢀusesꢀadvancedꢀtrenchꢀtechnologyꢀto  
provideꢀexcellentꢀRDS(ON)ꢀandꢀlowꢀgateꢀcharge.ꢀThis  
deviceꢀisꢀsuitableꢀforꢀuseꢀasꢀaꢀloadꢀswitchꢀorꢀinꢀPWM  
applications.  
VDSꢀ(V)ꢀ=ꢀ30V  
IDꢀ=ꢀ10Aꢀ(VGSꢀ=ꢀ10V)  
RDS(ON)ꢀ<ꢀ28mꢀ(VGSꢀ=ꢀ10V)  
RDS(ON)ꢀ<ꢀ42mꢀ(VGSꢀ=ꢀ4.5V)  
ꢀꢀꢀꢀꢀꢁRoHSꢀCompliant  
ꢀꢀꢀꢀꢀꢁHalogenꢀFree*  
100% UIS Tested!  
100% Rg Tested!  
TO-252  
D-PAK  
Bottom View  
Top View  
D
D
G
S
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
DrainꢁSourceꢀVoltage  
GateꢁSourceꢀVoltage  
VDS  
30  
±20  
10  
V
V
VGS  
TC=25°C  
ContinuousꢀDrain  
CurrentꢀG  
TC=100°C  
ID  
10  
A
PulsedꢀDrainꢀCurrentꢀC  
AvalancheꢀCurrentꢀC  
RepetitiveꢀavalancheꢀenergyꢀL=0.1mHꢀC  
IDM  
IAR  
EAR  
30  
15  
A
36  
mJ  
TC=25°C  
PowerꢀDissipationꢀB  
TC=100°C  
60  
PD  
W
30  
TA=25°C  
2.5  
PDSM  
W
PowerꢀDissipationꢀA  
1.6  
TA=70°C  
JunctionꢀandꢀStorageꢀTemperatureꢀRange  
TJ,ꢀTSTG  
ꢁ55ꢀtoꢀ175  
°C  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
16.7  
40  
Max  
25  
50  
Units  
°C/W  
°C/W  
°C/W  
MaximumꢀJunctionꢁtoꢁAmbientꢀA  
MaximumꢀJunctionꢁtoꢁAmbientꢀA  
tꢀꢀ≤ꢀ10s  
SteadyꢁState  
SteadyꢁState  
RθJA  
MaximumꢀJunctionꢁtoꢁCaseꢀB  
RθJC  
1.9  
2.5  
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com  

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