Datasheet > AOD4189

AOD4189

更新时间： 2024-10-31 17:15:19

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
7页	632K
描述
种类:P-Channel;漏源电压（Vdss）:-40V;持续漏极电流（Id）（在25°C时）:-40A;Vgs(th)(V):±20;漏源导通电阻:22mΩ@-10V

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AOD4189 数据手册

UMW

AOD4189

P-Channel MOSFET

Features

● VDS (V) =-40V

● ID = -40A

● RDS(ON) ＜ 22mΩ (VGS =-10V)

● RDS(ON) ＜ 29mΩ (VGS =-4.5V)

General Description

The AOD4189 uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate

charge. With the excellent thermal resistance of the

TO-252 package, this device is well suited for high

current load applications.

Absolute Maximum Ratings T_C=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

-40

±20

-40

Gate-Source Voltage

Continuous Drain

Current ^B,H

Pulsed Drain Current^C

Avalanche Current ^C

V_GS

T_C=25°C

T_C=100°C

I_D

-28

I_DM

I_AR

E_AR

-50

-35

Repetitive avalanche energy L=0.1mH^C

°C

T_C=25°C

62.5

P_D

Power Dissipation ^B

T_C=100°C

T_A=25°C

2.5

P_DSM

Power Dissipation ^A

1.6

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 175

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A,G

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A,G

Maximum Junction-to-Case ^D,F

Steady-State

R_θJC

2.4

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UTD Semiconductor Co.,Limited

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