Datasheet > AOD425

AOD425

更新时间： 2024-09-15 06:37:15

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
6页	203K
描述
P-Channel Enhancement Mode Field Effect Transistor

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AOD425 数据手册

AOD425

P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

TheꢀAOD425ꢀusesꢀadvancedꢀtrenchꢀtechnologyꢀto

provideꢀexcellentꢀR_DS(ON)ꢀandꢀultraꢁlowꢀlowꢀgateꢀcharge

withꢀaꢀ25Vꢀgateꢀrating.ꢀThisꢀdeviceꢀisꢀsuitableꢀforꢀuseꢀasꢀa

loadꢀswitchꢀorꢀinꢀPWMꢀapplications.ꢀTheꢀdeviceꢀisꢀESD

protected.

V_DSꢀ(V)ꢀ=ꢀꢁ30V

I_Dꢀ=ꢀꢁ20Aꢀ(V_GSꢀ=ꢀꢁ10V)

R_DS(ON)ꢀ<ꢀ17mΩꢀ(V_GSꢀ=ꢀꢁ10V)

_DS(ON)ꢀ<ꢀ35mΩꢀ(V_GSꢀ=ꢀꢁ5V)

ꢀꢀꢀꢀꢁRoHSꢀCompliant

ꢀꢀꢀꢀꢀꢁHalogenꢀFree*

ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀESD Protected!

ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ100% Rg Tested!

TO-252

D-PAK

Bottom View

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Maximum

ꢁ30

Units

Symbol

V_DS

DrainꢁSourceꢀVoltage

GateꢁSourceꢀVoltage

V_GS

±25

T_C=25°C

ꢁ40

ContinuousꢀDrain

Currentꢀ^F

PulsedꢀDrainꢀCurrentꢀ^C

T_C=100°C

I_D

ꢁ30

I_DM

ꢁ70

_A=25°C

_A=70°C

ꢁ9

ContinuousꢀDrain

Current

I_DSM

ꢁ7

T_C=25°C

T_C=100°C

T_A=25°C

T_A=70°C

P_D

PowerꢀDissipationꢀ^B

2.3

P_DSM

PowerꢀDissipationꢀ^A

1.5

JunctionꢀandꢀStorageꢀTemperatureꢀRange

T_J,ꢀT_STG

ꢁ55ꢀtoꢀ175

°C

Thermal Characteristics

Parameter

Units

°C/W

Symbol

Typ

Max

MaximumꢀJunctionꢁtoꢁAmbientꢀ^A

tꢀꢀ≤ꢀ10s

R_θJA

MaximumꢀJunctionꢁtoꢁAmbientꢀ^A

MaximumꢀJunctionꢁtoꢁCaseꢀ^B

SteadyꢁState

2.4

R_θJC

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5 6

中文翻译

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