Datasheet > AOD421

AOD421

更新时间： 2024-09-15 03:18:55

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
5页	118K
描述
P-Channel Enhancement Mode Field Effect Transisto

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技术参数
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AOD421 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.58
Base Number Matches：	1

AOD421 数据手册

AOD421

P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOD421 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for load switching. It is ESD

protected. Standard Product AOD421 is Pb-free

(meets ROHS & Sony 259 specifications). AOD421L

is a Green Product ordering option. AOD421 and

AOD421L are electrically identical.

V_DS(V) = -20V

I_D= -12.5 A (V_GS= -10V)

R_DS(ON)< 75mΩ (V_GS= -10V)

R_DS(ON)< 95mΩ (V_GS= -4.5V)

R_DS(ON)< 145mΩ (V_GS= -2.5V)

ESD Rating: 2000V HBM

TO-252

D-PAK

Top View

Drain Connected

to Tab

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

-20

V_GS

Gate-Source Voltage

Continuous Drain

Current ^G

±12

-12.5

-8.9

T_A=25°C

T_A=70°C

I_D

Pulsed Drain Current ^C

I_DM

-30

T_C=25°C

T_C=100°C

T_A=25°C

T_A=70°C

18.8

9.4

P_D

Power Dissipation ^B

Power Dissipation ^A

P_DSM

1.33

-55 to 175

T_J, T_STG

Junction and Storage Temperature Range

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Case ^B

°C/W

t ≤ 10s

R_θJA

Steady-State

R_θJC

Alpha & Omega Semiconductor, Ltd.

12 3 4 5

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