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AOD424 PDF预览

AOD424

更新时间: 2024-11-05 12:51:27
品牌 Logo 应用领域
飞思卡尔 - FREESCALE /
页数 文件大小 规格书
6页 472K
描述
20V N-Channel MOSFET

AOD424 数据手册

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AOD424  
20V N-Channel MOSFET  
General Description  
technology with a low resistance package to provide  
The AOD424 combines advanced trench MOSFET  
and battery protection applications.  
extremely low RDS(ON). This device is ideal for load switch  
Features  
VDS  
20V  
ID (at VGS=4.5V)  
RDS(ON) (at VGS=4.5V)  
RDS(ON) (at VGS=2.5V)  
45A  
< 4.4m  
< 5.7mΩ  
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
20  
±12  
45  
V
V
VGS  
TC=25°C  
Continuous Drain  
Current G  
Pulsed Drain Current C  
ID  
TC=100°C  
35  
A
A
IDM  
160  
18  
TA=25°C  
TA=70°C  
Continuous Drain  
Current  
Avalanche Current C  
Avalanche energy L=0.1mH C  
IDSM  
15  
IAS, IAR  
57  
A
EAS, EAR  
162  
100  
50  
mJ  
TC=25°C  
PD  
W
Power Dissipation B  
TC=100°C  
TA=25°C  
2.5  
PDSM  
W
°C  
Power Dissipation A  
1.6  
TA=70°C  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 175  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
16  
Max  
20  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Case  
t
10s  
RθJA  
Steady-State  
Steady-State  
41  
50  
RθJC  
1.2  
1.5  
1/6  
www.freescale.net.cn  

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