Datasheet > AOD446

AOD446

更新时间： 2024-11-06 12:51:27

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管
页数	文件大小	规格书
6页	507K
描述
N-Channel Enhancement Mode Field Effect Transistor

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AOD446 数据手册

AOD446

N-Channel Enhancement Mode Field

Effect Transistor

General Description

TheꢀAOD446ꢀusesꢀadvancedꢀtrenchꢀtechnologyꢀand designꢀtoꢀprovideꢀexcellentꢀR_DS(ON)ꢀwithꢀlowꢀgate

charge.ꢀThisꢀdeviceꢀisꢀsuitableꢀforꢀuseꢀinꢀPWM,ꢀload switchingꢀandꢀgeneralꢀpurposeꢀapplications.

Features

V_DSꢀ(V)ꢀ=ꢀ75V

I_Dꢀ=ꢀ10ꢀAꢀ(V_GSꢀ=ꢀ20V)

R_DS(ON)ꢀ<ꢀ130ꢀmΩꢀ(V_GSꢀ=ꢀ20V)

R_DS(ON)ꢀ<ꢀ140ꢀmΩꢀ(V_GSꢀ=ꢀ10V)

_DS(ON)ꢀ<ꢀ165ꢀmΩꢀ(V_GSꢀ=ꢀ4.5V)

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

DrainꢁSourceꢀVoltage

V_DS

GateꢁSourceꢀVoltage

V_GS

±25

T_C=25°C

ContinuousꢀDrain

Currentꢀ^G

T_C=100°C

I_D

PulsedꢀDrainꢀCurrentꢀ^C

AvalancheꢀCurrentꢀ^C

RepetitiveꢀavalancheꢀenergyꢀL=0.3mHꢀ^C

I_DM

I_AR

E_AR

T_C=25°C

PowerꢀDissipationꢀ^B

T_C=100°C

P_D

T_A=25°C

2.1

P_DSM

PowerꢀDissipationꢀ^A

1.3

T_A=70°C

JunctionꢀandꢀStorageꢀTemperatureꢀRange

T_J,ꢀT_STG

ꢁ55ꢀtoꢀ175

°C

Thermal Characteristics

Parameter

Symbol

Typ

17.4

Max

Units

°C/W

MaximumꢀJunctionꢁtoꢁAmbientꢀ^A

tꢀꢀ≤ꢀ10s

R_θJA

MaximumꢀJunctionꢁtoꢁAmbientꢀ^A

MaximumꢀJunctionꢁtoꢁCaseꢀ^B

SteadyꢁState

R_θJC

7.5

1/6

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