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AOD444 PDF预览

AOD444

更新时间: 2024-11-06 12:51:35
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
6页 254K
描述
60V N-Channel MOSFET

AOD444 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-252
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:1.68Is Samacsys:N
雪崩能效等级(Eas):18 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (ID):12 A最大漏源导通电阻:0.06 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):30 A
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

AOD444 数据手册

 浏览型号AOD444的Datasheet PDF文件第2页浏览型号AOD444的Datasheet PDF文件第3页浏览型号AOD444的Datasheet PDF文件第4页浏览型号AOD444的Datasheet PDF文件第5页浏览型号AOD444的Datasheet PDF文件第6页 
AOD444/AOI444  
60V N-Channel MOSFET  
General Description  
Product Summary  
VDS  
The AOD444/AOI444 combine advanced trench MOSFET  
technology with a low resistance package to provide  
extremely low RDS(ON). Those devices are suitable for use  
in PWM, load switching and general purpose applications.  
60V  
12A  
ID (at VGS=10V)  
< 60mΩ  
< 85mΩ  
RDS(ON) (at VGS=10V)  
RDS(ON) (at VGS = 4.5V)  
100% UIS Tested  
100% Rg Tested  
TO252  
DPAK  
TO-251A  
IPAK  
D
TopView  
Bottom View  
TopView  
Bottom View  
D
D
D
G
S
S
G
G
D
G
S
D
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
60  
V
VGS  
ID  
IDM  
IDSM  
Gate-Source Voltage  
Continuous Drain  
Current G  
±20  
V
A
TC=25°C  
12  
TC=100°C  
9
Pulsed Drain Current C  
30  
TA=25°C  
TA=70°C  
4
Continuous Drain  
Current  
Avalanche Current C  
Avalanche energy L=0.1mH C  
A
3
19  
IAS, IAR  
A
EAS, EAR  
18  
mJ  
TC=25°C  
20  
PD  
W
Power Dissipation B  
Power Dissipation A  
TC=100°C  
TA=25°C  
TA=70°C  
10  
2.1  
PDSM  
W
1.3  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 175  
°C  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
17.4  
50  
Max  
30  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
t 10s  
RθJA  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Case  
60  
Steady-State  
Steady-State  
RθJC  
4
7.5  
Rev 0: Aug 2009  
www.aosmd.com  
Page 1 of 6  

AOD444 替代型号

型号 品牌 替代类型 描述 数据表
AOI444 AOS

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