Datasheet > AOD434

AOD434

更新时间： 2024-11-04 22:05:43

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
4页	117K
描述
N-Channel Enhancement Mode Field Effect Transistor

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技术参数
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AOD434 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.57
Base Number Matches：	1

AOD434 数据手册

AOD434

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

V_DS(V) = 20V

The AOD434 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and

operation with gate voltages as low as 1.8V while

retaining a 12V V_GS(MAX)rating. It is ESD protected to

a 2KV HBM rating. Standard Product AOD434 is Pb-

free (meets ROHS & Sony 259 specifications).

AOD434L is a Green Product ordering option.

AOD434 and AOD434L are electrically identical.

I_D= 18A (V_GS= 10V)

R_DS(ON)< 14mΩ (V_GS= 10V)

R_DS(ON)< 16mΩ (V_GS= 4.5V)

R_DS(ON)< 21mΩ (V_GS= 2.5V)

R_DS(ON)< 30mΩ (V_GS= 1.8V)

ESD Rating: 2KV HBM

TO-252

D-PAK

Top View

Drain Connected to

Tab

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

Continuous Drain

Current ^G

Pulsed Drain Current ^C

Avalanche Current ^C

±12

T_C=25°C

T_C=100°C

I_D

I_DM

I_AR

E_AR

Repetitive avalanche energy L=0.1mH ^C

T_C=25°C

Power Dissipation ^B

T_C=100°C

P_D

T_A=25°C

2.5

P_DSM

Power Dissipation ^A

T_A=70°C

1.6

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Case ^B

Symbol

Typ

16.7

Max

Units

°C/W

t ≤ 10s

R_θJA

Steady-State

R_θJC

1.9

2.5

Alpha & Omega Semiconductor, Ltd.

12 3 4

中文翻译

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