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AOD446_08 PDF预览

AOD446_08

更新时间: 2024-11-06 12:51:35
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管
页数 文件大小 规格书
6页 198K
描述
N-Channel Enhancement Mode Field Effect Transistor

AOD446_08 数据手册

 浏览型号AOD446_08的Datasheet PDF文件第2页浏览型号AOD446_08的Datasheet PDF文件第3页浏览型号AOD446_08的Datasheet PDF文件第4页浏览型号AOD446_08的Datasheet PDF文件第5页浏览型号AOD446_08的Datasheet PDF文件第6页 
AOD446  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
VDSꢀ(V)ꢀ=ꢀ75V  
TheꢀAOD446ꢀusesꢀadvancedꢀtrenchꢀtechnologyꢀand  
designꢀtoꢀprovideꢀexcellentꢀRDS(ON)ꢀwithꢀlowꢀgate  
charge.ꢀThisꢀdeviceꢀisꢀsuitableꢀforꢀuseꢀinꢀPWM,ꢀload  
switchingꢀandꢀgeneralꢀpurposeꢀapplications.  
IDꢀ=ꢀ10ꢀAꢀ(VGSꢀ=ꢀ20V)  
RDS(ON)ꢀ<ꢀ130ꢀmꢀ(VGSꢀ=ꢀ20V)  
R
DS(ON)ꢀ<ꢀ140ꢀmꢀ(VGSꢀ=ꢀ10V)  
RDS(ON)ꢀ<ꢀ165ꢀmꢀ(VGSꢀ=ꢀ4.5V)  
ꢀꢀꢀꢀꢀꢁRoHSꢀCompliant  
ꢀꢀꢀꢀꢀꢁHalogenꢀFree*  
100% UIS Tested!  
100% Rg Tested!  
TO-252  
D-PAK  
Bottom View  
Top View  
D
D
G
S
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
DrainꢁSourceꢀVoltage  
VDS  
75  
V
GateꢁSourceꢀVoltage  
VGS  
±25  
10  
V
A
TC=25°C  
ContinuousꢀDrain  
CurrentꢀG  
TC=100°C  
ID  
10  
PulsedꢀDrainꢀCurrentꢀC  
AvalancheꢀCurrentꢀC  
RepetitiveꢀavalancheꢀenergyꢀL=0.3mHꢀC  
IDM  
IAR  
EAR  
20  
10  
A
15  
mJ  
TC=25°C  
PowerꢀDissipationꢀB  
TC=100°C  
20  
PD  
W
10  
TA=25°C  
2.1  
PDSM  
W
PowerꢀDissipationꢀA  
1.3  
TA=70°C  
JunctionꢀandꢀStorageꢀTemperatureꢀRange  
TJ,ꢀTSTG  
ꢁ55ꢀtoꢀ175  
°C  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
17.4  
50  
Max  
30  
Units  
°C/W  
°C/W  
°C/W  
MaximumꢀJunctionꢁtoꢁAmbientꢀA  
tꢀꢀ≤ꢀ10s  
RθJA  
MaximumꢀJunctionꢁtoꢁAmbientꢀA  
MaximumꢀJunctionꢁtoꢁCaseꢀB  
SteadyꢁState  
SteadyꢁState  
60  
RθJC  
4
7.5  
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com  

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