Datasheet > AOD444

AOD444

更新时间： 2024-09-17 17:15:31

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
7页	533K
描述
种类:N-Channel;漏源电压（Vdss）:60V;持续漏极电流（Id）（在25°C时）:12A;Vgs(th)(V):±20;漏源导通电阻:60mΩ@10V

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AOD444 数据手册

UMW

AOD444

60V N-Channel MOSFET

General Description

The AOD444 combine advanced trench MOSFET

technology with a low resistance package to provide

extremely low R_DS(ON). Those devices are suitable for use

in PWM, load switching and general purpose applications.

Product Summary

V_DS

60V

12A

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS= 4.5V)

< 60mΩ

< 85mΩ

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

I_D

I_DM

I_DSM

Gate-Source Voltage

Continuous Drain

Current ^G

±20

T_C=25°C

T_C=100°C

Pulsed Drain Current ^C

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Avalanche energy L=0.1mH ^C

I_AS, I_AR

E_AS, E_AR

T_C=25°C

P_D

Power Dissipation ^B

Power Dissipation ^A

T_C=100°C

T_A=25°C

T_A=70°C

2.1

P_DSM

1.3

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Symbol

Typ

17.4

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Case

Steady-State

R_θJC

7.5

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UTD Semiconductor Co.,Limited

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