Datasheet > AOD450_08

AOD450_08

更新时间： 2024-09-12 12:24:51

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
6页	186K
描述
N-Channel Enhancement Mode Field Effect Transistor

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AOD450_08 数据手册

AOD450

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

TheꢀAOD450ꢀusesꢀadvancedꢀtrenchꢀtechnologyꢀand

designꢀtoꢀprovideꢀexcellentꢀR_DS(ON)ꢀwithꢀlowꢀgate

charge.ꢀThisꢀdeviceꢀisꢀsuitableꢀforꢀuseꢀinꢀinverter,ꢀload

switchingꢀandꢀgeneralꢀpurposeꢀapplications.

V_DSꢀ(V)ꢀ=ꢀ200V

I_Dꢀ=ꢀ3.8Aꢀꢀ(VGSꢀ=ꢀ10V)

_DS(ON)ꢀ<0.7Ωꢀ(V_GSꢀ=ꢀ10V)

ꢀꢀꢀꢀꢀꢁRoHSꢀCompliant

ꢀꢀꢀꢀꢀꢁHalogenꢀFree*

100% UIS Tested!

100% Rg Tested!

193

TO-252

D-PAK

Bottom View

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

DrainꢁSourceꢀVoltage

V_DS

200

GateꢁSourceꢀVoltage

V_GS

±30

T_C=25°C

3.8

ContinuousꢀDrain

Current

T_C=100°C

I_D

2.7

PulsedꢀDrainꢀCurrentꢀ^C

AvalancheꢀCurrentꢀ^C

RepetitiveꢀavalancheꢀenergyꢀL=1.35mHꢀ^C

I_DM

I_AR

E_AR

T_C=25°C

PowerꢀDissipationꢀ^B

T_C=100°C

P_D

12.5

2.1

T_A=25°C

P_DSM

PowerꢀDissipationꢀ^A

1.3

T_A=70°C

JunctionꢀandꢀStorageꢀTemperatureꢀRange

T_J,ꢀT_STG

ꢁ55ꢀtoꢀ175

°C

Thermal Characteristics

Parameter

Symbol

Typ

17.1

Max

Units

°C/W

MaximumꢀJunctionꢁtoꢁAmbientꢀ^A

tꢀꢀ≤ꢀ10s

R_θJA

MaximumꢀJunctionꢁtoꢁAmbientꢀ^A

MaximumꢀJunctionꢁtoꢁCaseꢀ^B

SteadyꢁState

R_θJC

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5 6

中文翻译

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