Datasheet > AOD450

AOD450

更新时间： 2024-01-27 13:52:56

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
5页	117K
描述
N-Channel Enhancement Mode Field Effect Transistor

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技术参数
数据手册
替代型号

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AOD450 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	1.53	Base Number Matches：	1

AOD450 数据手册

AOD450

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOD450 uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate

charge. This device is suitable for use in inverter, load

switching and general purpose applications. Standard

product AOD450 is Pb-free (meets ROHS & Sony

259 specifications). AOD450L is a Green Product

ordering option. AOD450 and AOD450L are

electrically identical.

V_DS(V) = 200V

I_D= 3.8A

R_DS(ON)<0.7Ω (V_GS= 10V)

193

TO-252

D-PAK

Top View

Drain Connected to

Tab

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

200

V_GS

Gate-Source Voltage

±30

T_C=25°C

3.8

Continuous Drain

Current

T_C=100°C

I_D

2.7

Pulsed Drain Current ^C

Avalanche Current ^C

Repetitive avalanche energy L=1.35mH ^C

I_DM

I_AR

E_AR

T_C=25°C

P_D

Power Dissipation ^B

T_C=100°C

12.5

2.1

T_A=25°C

P_DSM

Power Dissipation ^A

T_A=70°C

1.3

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Symbol

Typ

17.1

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Case ^B

Steady-State

R_θJC

Alpha & Omega Semiconductor, Ltd.

12 3 4 5

中文翻译

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AOD450 替代型号

型号	品牌	替代类型	描述	数据表
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