Datasheet > AOD4191L

AOD4191L

更新时间： 2024-09-15 06:37:15

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
6页	526K
描述
P-Channel Enhancement Mode Field Effect Transistor

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技术参数
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AOD4191L 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.58
Base Number Matches：	1

AOD4191L 数据手册

AOD4191L

P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOD4191 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and low gate

resistance. The device well suited for high current

applications.

V_DS(V) = -40V

I_D= -34A

(V_GS= -10V)

(V_GS= -4.5V)

R_DS(ON)< 25mΩ

R_DS(ON)< 34mΩ

100% UIS Tested!

100% R _gTested!

-RoHS Compliant

-Halogen Free*

TO-252

D-PAK

Bottom View

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

-40

±20

-34

Gate-Source Voltage

Continuous Drain

Current ^B

V_GS

T_C=25°C

T_C=100°C

I_D

-24

Pulsed Drain Current ^C

Continuous Drain

Current ^A

I_DM

-70

T_C=25°C

-7

T_C=100°C

I_D

-6

Avalanche Current ^C

I_AR

E_AR

-31

Repetitive avalanche energy L=0.1mH^C

T_C=25°C

Power Dissipation ^B

T_C=100°C

P_D

T_A=25°C

2.5

P_DSM

Power Dissipation ^A

1.6

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 175

°C

Thermal Characteristics

Parameter

Symbol

Typ

16.7

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Case^B

Steady-State

R_θJC

2.5

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5 6

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