Datasheet > AOD421_08

AOD421_08

更新时间： 2024-11-21 12:51:35

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
6页	139K
描述
P-Channel Enhancement Mode Field Effect Transistor

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AOD421_08 数据手册

AOD421

P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOD421 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for load switching. It is ESD

protected.

V_DS(V) = -20V

I_D= -12.5 A (V_GS= -10V)

R_DS(ON)< 75mΩ (V_GS= -10V)

_DS(ON)< 95mΩ (V_GS= -4.5V)

R_DS(ON)< 145mΩ (V_GS= -2.5V)

-RoHS Compliant

-Halogen Free*

ESD Protected!

100% Rg Tested!

TO-252

D-PAK

Bottom View

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

-20

Gate-Source Voltage

V_GS

±12

-12.5

-8.9

T_A=25°C

T_A=70°C

Continuous Drain

Current ^G

I_D

Pulsed Drain Current ^C

I_DM

-30

T_C=25°C

T_C=100°C

T_A=25°C

T_A=70°C

18.8

9.4

P_D

Power Dissipation ^B

P_DSM

°C

Power Dissipation ^A

1.33

-55 to 175

Junction and Storage Temperature Range

T_J, T_STG

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Steady-State

Maximum Junction-to-Case ^B

R_θJC

Alpha & Omega Semiconductor, Ltd.

12 3 4 5 6

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