AOD420L

更新时间： 2024-11-18 08:31:03

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
4页	160K
描述
N-Channel Enhancement Mode Field Effect Transistor

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技术参数
数据手册

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AOD420L 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Is Samacsys：	N	Base Number Matches：	1

AOD420L 数据手册

AOD420

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOD420 uses advanced trench technology to

provide excellent R_DS(ON)and low gate charge. This

device is suitable for use as a load switch or in PWM

applications. Standard Product AOD420 is Pb-free

(meets ROHS & Sony 259 specifications). AOD420L

is a Green Product ordering option. AOD420 and

AOD420L are electrically identical.

V_DS(V) = 30V

I_D= 10A (V_GS= 10V)

_DS(ON)< 28mΩ (V_GS= 10V)

_DS(ON)< 42mΩ (V_GS= 4.5V)

TO-252

D-PAK

Top View

Drain Connected

to Tab

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

Continuous Drain

Current ^G

Pulsed Drain Current ^C

Avalanche Current ^C

±20

T_C=25°C

T_C=100°C

I_D

I_DM

I_AR

E_AR

Repetitive avalanche energy L=0.1mH ^C

T_C=25°C

Power Dissipation ^B

T_C=100°C

P_D

T_A=25°C

2.5

P_DSM

Power Dissipation ^A

T_A=70°C

1.6

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Case ^B

Symbol

Typ

16.7

Max

Units

°C/W

t ≤ 10s

R_θJA

Steady-State

R_θJC

1.9

2.5

Alpha & Omega Semiconductor, Ltd.

12 3 4

中文翻译

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