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AOD420L PDF预览

AOD420L

更新时间: 2024-11-05 08:31:03
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管
页数 文件大小 规格书
4页 160K
描述
N-Channel Enhancement Mode Field Effect Transistor

AOD420L 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
Is Samacsys:NBase Number Matches:1

AOD420L 数据手册

 浏览型号AOD420L的Datasheet PDF文件第2页浏览型号AOD420L的Datasheet PDF文件第3页浏览型号AOD420L的Datasheet PDF文件第4页 
AOD420  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AOD420 uses advanced trench technology to  
provide excellent RDS(ON) and low gate charge. This  
device is suitable for use as a load switch or in PWM  
applications. Standard Product AOD420 is Pb-free  
(meets ROHS & Sony 259 specifications). AOD420L  
is a Green Product ordering option. AOD420 and  
AOD420L are electrically identical.  
VDS (V) = 30V  
ID = 10A (VGS = 10V)  
R
DS(ON) < 28m(VGS = 10V)  
DS(ON) < 42m(VGS = 4.5V)  
R
TO-252  
D-PAK  
D
S
Top View  
Drain Connected  
to Tab  
G
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
30  
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current G  
Pulsed Drain Current C  
Avalanche Current C  
±20  
10  
V
A
TC=25°C  
TC=100°C  
ID  
10  
IDM  
IAR  
EAR  
30  
15  
A
Repetitive avalanche energy L=0.1mH C  
36  
mJ  
TC=25°C  
Power Dissipation B  
TC=100°C  
60  
PD  
W
30  
TA=25°C  
2.5  
PDSM  
W
Power Dissipation A  
TA=70°C  
1.6  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 175  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Case B  
Symbol  
Typ  
16.7  
40  
Max  
25  
Units  
°C/W  
°C/W  
°C/W  
t 10s  
RθJA  
Steady-State  
Steady-State  
50  
RθJC  
1.9  
2.5  
Alpha & Omega Semiconductor, Ltd.  

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