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AOD422

更新时间: 2024-11-18 12:51:35
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管
页数 文件大小 规格书
5页 428K
描述
20V N-Channel MOSFET

AOD422 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.81
Base Number Matches:1

AOD422 数据手册

 浏览型号AOD422的Datasheet PDF文件第2页浏览型号AOD422的Datasheet PDF文件第3页浏览型号AOD422的Datasheet PDF文件第4页浏览型号AOD422的Datasheet PDF文件第5页 
AOD422  
20V N-Channel MOSFET  
General Description  
Product Summary  
VDS  
20V  
The AOD422 uses advanced trench technology to provide  
excellent RDS(ON), low gate charge and operation with gate  
voltages as low as 1.8V. This device is suitable for use as  
a load switch or in PWM applications. It is ESD  
protected.  
ID (at VGS=4.5V)  
RDS(ON) (at VGS=4.5V)  
RDS(ON) (at VGS =2.5V)  
RDS(ON) (at VGS =1.8V)  
20A  
< 25m  
< 28mΩ  
< 34mΩ  
ESD protected  
100% UIS Tested  
TO252  
DPAK  
D
Top View  
Bottom View  
D
D
G
S
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
20  
±8  
20  
16  
V
V
VGS  
TC=25°C  
Continuous Drain  
Current G  
ID  
TC=100°C  
A
Pulsed Drain Current C  
IDM  
90  
TA=25°C  
TA=70°C  
8
6.5  
Continuous Drain  
Current  
IDSM  
A
Avalanche Current C  
IAS, IAR  
15  
A
Avalanche energy L=0.1mH C  
EAS, EAR  
11  
mJ  
TC=25°C  
Power Dissipation B  
TC=100°C  
37  
PD  
W
18  
TA=25°C  
2.5  
PDSM  
W
°C  
Power Dissipation A  
1.6  
TA=70°C  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 175  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
16.7  
40  
Max  
25  
50  
4
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Case  
t
10s  
RθJA  
Steady-State  
Steady-State  
RθJC  
3
Rev 5: July 2010  
www.aosmd.com  
Page 1 of 5  

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