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AOD421 PDF预览

AOD421

更新时间: 2024-11-21 12:51:27
品牌 Logo 应用领域
飞思卡尔 - FREESCALE /
页数 文件大小 规格书
6页 446K
描述
P-Channel Enhancement Mode Field

AOD421 数据手册

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AOD421  
P-Channel Enhancement Mode Field  
Effect Transistor  
General Description  
provide excellent RDS(ON), low gate charge and  
The AOD421 uses advanced trench technology to  
operation with gate voltages as low as 2.5V. This device is suitable for load switching. It is ESD  
protected.  
Features  
VDS (V) = -20V  
ID = -12.5 A (VGS = -10V)  
RDS(ON) < 75m(VGS = -10V)  
R
DS(ON) < 95m(VGS = -4.5V)  
RDS(ON) < 145m(VGS = -2.5V)  
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
Drain-Source Voltage  
VDS  
-20  
V
Gate-Source Voltage  
VGS  
±12  
-12.5  
-8.9  
V
A
TA=25°C  
TA=70°C  
Continuous Drain  
Current G  
ID  
Pulsed Drain Current C  
IDM  
-30  
TC=25°C  
TC=100°C  
TA=25°C  
TA=70°C  
18.8  
9.4  
PD  
W
Power Dissipation B  
2
PDSM  
W
°C  
Power Dissipation A  
1.33  
-55 to 175  
Junction and Storage Temperature Range  
TJ, TSTG  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
23  
50  
6
Max  
28  
60  
8
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
t 10s  
RθJA  
Steady-State  
Steady-State  
Maximum Junction-to-Case B  
RθJC  
1/6  
www.freescale.net.cn  

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