Datasheet > AOD421

AOD421

更新时间： 2024-11-05 12:51:27

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
6页	446K
描述
P-Channel Enhancement Mode Field

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AOD421 数据手册

AOD421

P-Channel Enhancement Mode Field

Effect Transistor

General Description

provide excellent R_DS(ON), low gate charge and

The AOD421 uses advanced trench technology to

operation with gate voltages as low as 2.5V. This device is suitable for load switching. It is ESD

protected.

Features

V_DS(V) = -20V

I_D= -12.5 A (V_GS= -10V)

R_DS(ON)< 75mΩ (V_GS= -10V)

_DS(ON)< 95mΩ (V_GS= -4.5V)

R_DS(ON)< 145mΩ (V_GS= -2.5V)

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

-20

Gate-Source Voltage

V_GS

±12

-12.5

-8.9

T_A=25°C

T_A=70°C

Continuous Drain

Current ^G

I_D

Pulsed Drain Current ^C

I_DM

-30

T_C=25°C

T_C=100°C

T_A=25°C

T_A=70°C

18.8

9.4

P_D

Power Dissipation ^B

P_DSM

°C

Power Dissipation ^A

1.33

-55 to 175

Junction and Storage Temperature Range

T_J, T_STG

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Steady-State

Maximum Junction-to-Case ^B

R_θJC

1/6

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