Datasheet > AOD422L

AOD422L

更新时间： 2024-09-14 21:55:23

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	139K
描述
N-Channel Enhancement Mode Field Effect Transistor

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AOD422L 数据手册

Rev 2: Sep 2004

AOD422, AOD422L (Green Product)

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOD422 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and

operation with gate voltages as low as 1.8V. This

device is suitable for use as a load switch or in PWM

applications. It is ESD protected. AOD422L (Green

Product) is offered in a Lead Free package.

V_DS(V) = 20V

I_D= 10 A

R_DS(ON)< 22mΩ (V_GS= 4.5V)

_DS(ON)< 26mΩ (V_GS= 2.5V)

_DS(ON)< 34mΩ (V_GS= 1.8V)

ESD Rating: 2000V HBM

TO-252

D-PAK

Top View

Drain Connected to

Tab

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

Continuous Drain

Current ^G

±8

T_C=25°C

T_C=100°C

I_D

Pulsed Drain Current ^C

Avalanche Current ^C

I_DM

I_AR

E_AR

Repetitive avalanche energy L=0.1mH ^C

T_C=25°C

P_D

Power Dissipation ^B

T_C=100°C

T_A=25°C

T_A=70°C

2.5

1.6

P_DSM

Power Dissipation ^A

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Parameter

Symbol

Typ

16.7

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Case ^C

t ≤ 10s

Steady-State

R_θJA

R_θJL

1.9

2.5

Alpha & Omega Semiconductor, Ltd.

12 3 4

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