Datasheet > AOD419

AOD419

更新时间： 2024-11-18 03:18:55

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
5页	119K
描述
P-Channel Enhancement Mode Field Effect Transistor

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技术参数
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AOD419 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.58
Base Number Matches：	1

AOD419 数据手册

AOD419

P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOD419 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and low

gate resistance. With the excellent thermal resistance

of the DPAK package, this device is well suited for

high current load applications. Standard Product

AOD419 is Pb-free (meets ROHS & Sony 259

specifications). AOD419L is a Green Product

ordering option. AOD419 and AOD419L are

electrically identical.

V_DS(V) = -40V

I_D= -20A

(V_GS= -10V)

R_DS(ON)< 40mΩ (V_GS= -10V)

R_DS(ON)< 65mΩ (V_GS= -4.5V)

TO-252

D-PAK

Top View

Drain Connected

to Tab

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

-40

V_GS

Gate-Source Voltage

Continuous Drain

Current ^B,G

±20

-20

T_A=25°C ^G

T_A=100°C

I_D

-18

I_DM

I_AR

E_AR

Pulsed Drain Current

Avalanche Current ^C

Repetitive avalanche energy L=0.3mH ^C

-60

-20

T_C=25°C

Power Dissipation ^B

T_C=100°C

P_D

T_A=25°C

2.5

P_DSM

Power Dissipation ^A

T_A=70°C

1.6

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Case ^C

Symbol

Typ

16.7

Max

Units

°C/W

t ≤ 10s

R_θJA

Steady-State

R_θJL

2.5

Alpha & Omega Semiconductor, Ltd.

12 3 4 5

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