Datasheet > AOD4189L

AOD4189L

更新时间： 2024-11-21 19:53:23

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
5页	208K
描述
Transistor

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技术参数
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AOD4189L 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.84
Base Number Matches：	1

AOD4189L 数据手册

AOD4189

P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOD4189/L uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate

charge. With the excellent thermal resistance of the

DPAK package, this device is well suited for high

current load applications.

V_DS(V) = -40V

I_D= -40A

(V_GS= -10V)

R_DS(ON)< 22mΩ (V_GS= -10V)

R_DS(ON)< 29mΩ (V_GS= -4.5V)

AOD4189 and AOD4189L are electrically identical.

-RoHS Compliant

-AOD4189L is Halogen Free

TO-252

D-PAK

Top View

Drain Connected to

Tab

Absolute Maximum Ratings T_C=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

-40

V_GS

Gate-Source Voltage

Continuous Drain

Current ^B,H

Pulsed Drain Current ^C

Avalanche Current ^C

±20

-40

T_C=25°C

T_C=100°C

I_D

-28

I_DM

I_AR

E_AR

-50

-35

Repetitive avalanche energy L=0.1mH ^C

°C

T_C=25°C

62.5

P_D

Power Dissipation ^B

T_C=100°C

T_A=25°C

2.5

P_DSM

Power Dissipation ^A

T_A=70°C

1.6

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A,G

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A,G

Maximum Junction-to-Case ^D,F

Steady-State

R_θJC

2.4

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5

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