Datasheet > AOD4189

AOD4189

更新时间： 2024-11-18 12:24:23

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飞思卡尔 - FREESCALE		/
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6页	554K
描述
P-Channel Enhancement Mode Field

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AOD4189 数据手册

AOD4189

P-Channel Enhancement Mode Field

Effect Transistor

General Description

design to provide excellent R_DS(ON)with low gate

DPAK package, this device is well suited for high

The AOD4189 uses advanced trench technology and

charge. With the excellent thermal resistance of the

current load applications.

Features

V_DS(V) = -40V

I_D= -40A

R_DS(ON)< 22mΩ (V_GS= -10V)

_DS(ON)< 29mΩ (V_GS= -4.5V)

(V_GS= -10V)

Absolute Maximum Ratings T_C=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

-40

Gate-Source Voltage

Continuous Drain

Current ^B,H

Pulsed Drain Current^C

Avalanche Current ^C

V_GS

±20

-40

T_C=25°C

T_C=100°C

I_D

-28

I_DM

I_AR

E_AR

-50

-35

Repetitive avalanche energy L=0.1mH^C

°C

T_C=25°C

62.5

P_D

Power Dissipation ^B

T_C=100°C

T_A=25°C

2.5

P_DSM

Power Dissipation ^A

1.6

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 175

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A,G

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A,G

Maximum Junction-to-Case ^D,F

Steady-State

R_θJC

2.4

1/6

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