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AOD4184_09 PDF预览

AOD4184_09

更新时间: 2024-11-18 12:51:35
品牌 Logo 应用领域
美国万代 - AOS /
页数 文件大小 规格书
6页 292K
描述
40V N-Channel MOSFET

AOD4184_09 数据手册

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AOD4184/AOI4184  
40V N-Channel MOSFET  
General Description  
Product Summary  
VDS  
The AOD4184/AOI4184 used advanced trench technology  
and design to provide excellent RDS(ON) with low gate  
charge. With the excellent thermal resistance of the DPAK  
package, those devices are well suited for high current  
load applications.  
40V  
50A  
ID (at VGS=10V)  
< 8mΩ  
RDS(ON) (at VGS=10V)  
< 11mΩ  
RDS(ON) (at VGS = 4.5V)  
100% UIS Tested  
100% Rg Tested  
TO252  
DPAK  
TO-251A  
IPAK  
D
TopView  
Bottom View  
Top View  
Bottom View  
D
D
D
G
S
G
S
G
S
D
D
S
G
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
40  
Units  
Drain-Source Voltage  
V
VGS  
ID  
IDM  
IDSM  
±20  
Gate-Source Voltage  
V
A
TC=25°C  
50  
40  
Continuous Drain  
Current  
Pulsed Drain Current C  
TC=100°C  
120  
6.5  
TA=25°C  
TA=70°C  
Continuous Drain  
Current  
Avalanche Current C  
Avalanche energy L=0.1mH C  
A
5
IAS, IAR  
35  
A
EAS, EAR  
61  
mJ  
TC=25°C  
50  
PD  
W
Power Dissipation B  
Power Dissipation A  
TC=100°C  
TA=25°C  
TA=70°C  
25  
2.3  
PDSM  
W
1.5  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 175  
°C  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
Max  
22  
55  
3
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
18  
44  
t 10s  
RθJA  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Case  
Steady-State  
Steady-State  
RθJC  
2.4  
Rev0 : April 2009  
www.aosmd.com  
Page 1 of 6  

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