Datasheet > AOD4184_09

AOD4184_09

更新时间： 2024-09-16 12:51:35

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	292K
描述
40V N-Channel MOSFET

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AOD4184_09 数据手册

AOD4184/AOI4184

40V N-Channel MOSFET

General Description

Product Summary

V_DS

The AOD4184/AOI4184 used advanced trench technology

and design to provide excellent R_DS(ON)with low gate

charge. With the excellent thermal resistance of the DPAK

package, those devices are well suited for high current

load applications.

40V

50A

I_D(at V_GS=10V)

< 8mΩ

R_DS(ON)(at V_GS=10V)

< 11mΩ

R_DS(ON)(at V_GS= 4.5V)

100% UIS Tested

100% R_gTested

TO252

DPAK

TO-251A

IPAK

TopView

Bottom View

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

V_GS

I_D

I_DM

I_DSM

±20

Gate-Source Voltage

T_C=25°C

Continuous Drain

Current

Pulsed Drain Current ^C

T_C=100°C

120

6.5

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Avalanche energy L=0.1mH ^C

I_AS, I_AR

E_AS, E_AR

T_C=25°C

P_D

Power Dissipation ^B

Power Dissipation ^A

T_C=100°C

T_A=25°C

T_A=70°C

2.3

P_DSM

1.5

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

Steady-State

R_θJC

2.4

Rev0 : April 2009

www.aosmd.com

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与AOD4184_09相关器件

型号	品牌	获取价格	描述	数据表
AOD4184A	FREESCALE	获取价格	40V N-Channel MOSFET
AOD4184A	AOS	获取价格	40V N-Channel MOSFET
AOD4184L	AOS	获取价格	Plastic Encapsulated Device
AOD4185	AOS	获取价格	P-Channel Enhancement Mode Field Effect Transistor
AOD4185	UMW	获取价格	种类:P-Channel;漏源电压（Vdss）:-40V;持续漏极电流（Id）（在25°C
AOD4185_12	AOS	获取价格	P-Channel Enhancement Mode Field Effect Transistor
AOD4185L	AOS	获取价格	暂无描述
AOD4186	FREESCALE	获取价格	N-Channel Enhancement Mode Field
AOD4186	AOS	获取价格	N-Channel Enhancement Mode Field Effect Transistor
AOD4187	AOS	获取价格	P-Channel Enhancement Mode Field Effect Transistor