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AOD4189

更新时间: 2024-09-15 06:37:15
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管场效应晶体管
页数 文件大小 规格书
6页 218K
描述
P-Channel Enhancement Mode Field Effect Transistor

AOD4189 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:compliant
风险等级:1.7Samacsys Description:MOSFET P-CH 40V 40A TO252
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:40 V最大漏极电流 (ID):40 A
最大漏源导通电阻:0.022 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大脉冲漏极电流 (IDM):50 A
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

AOD4189 数据手册

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AOD4189  
P-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AOD4189 uses advanced trench technology and  
design to provide excellent RDS(ON) with low gate  
charge. With the excellent thermal resistance of the  
DPAK package, this device is well suited for high  
current load applications.  
VDS (V) = -40V  
ID = -40A  
(VGS = -10V)  
RDS(ON) < 22m(VGS = -10V)  
RDS(ON) < 29m(VGS = -4.5V)  
100% UIS Tested!  
100% Rg Tested!  
-RoHS Compliant  
-Halogen Free*  
TO-252  
D-PAK  
Bottom View  
Top View  
D
D
G
G
S
S
S
G
Absolute Maximum Ratings TC=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
Drain-Source Voltage  
VDS  
-40  
V
Gate-Source Voltage  
Continuous Drain  
Current B,H  
Pulsed Drain CurrentC  
Avalanche Current C  
VGS  
±20  
-40  
V
TC=25°C  
TC=100°C  
ID  
-28  
A
IDM  
IAR  
EAR  
-50  
-35  
Repetitive avalanche energy L=0.1mHC  
61  
mJ  
W
°C  
TC=25°C  
62.5  
31  
PD  
Power Dissipation B  
TC=100°C  
TA=25°C  
2.5  
PDSM  
Power Dissipation A  
1.6  
TA=70°C  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 175  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
15  
41  
2
Max  
20  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A,G  
t ≤ 10s  
RθJA  
Maximum Junction-to-Ambient A,G  
Maximum Junction-to-Case D,F  
Steady-State  
Steady-State  
50  
RθJC  
2.4  
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com  

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