Datasheet > AOD418

AOD418

更新时间： 2024-11-01 12:51:35

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	286K
描述
30V N-Channel MOSFET

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技术参数
数据手册

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AOD418 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	1.37
Base Number Matches：	1

AOD418 数据手册

AOD418/AOI418

30V N-Channel MOSFET

General Description

Product Summary

V_DS

The AOD418/AOI418 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and low gate

resistance. With the excellent thermal resistance of the

DPAK/IPAK package, this device is well suited for high

current load applications.

30V

36A

I_D(at V_GS= 10V)

< 7.5mΩ

< 11mΩ

R_DS(ON)(at V_GS= 10V)

R_DS(ON)(at V_GS= 4.5V)

100% UIS Tested

100% R_gTested

TO252

DPAK

TO251A

IPAK

Top View

Bottom View

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

V_GS

I_D

I_DM

I_DSM

±20

Gate-Source Voltage

Continuous Drain

Current ^G

T_C=25°C

T_C=100°C

Pulsed Drain Current ^C

125

13.5

10.5

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Avalanche energy L=0.1mH ^C

I_AS, I_AR

E_AS, E_AR

T_C=25°C

P_D

Power Dissipation ^B

Power Dissipation ^A

T_C=100°C

T_A=25°C

T_A=70°C

2.5

P_DSM

1.6

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

Steady-State

R_θJC

2.5

Rev 0: February 2011

www.aosmd.com

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