Datasheet > AOD4180

AOD4180

更新时间： 2024-11-20 12:51:27

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飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
7页	623K
描述
80V N-Channel MOSFET

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AOD4180 数据手册

AOD4180

80V N-Channel MOSFET

General Description

The AOD4180 is fabricated with SDMOS^TMtrench technology that combines excellent R_DS(ON)with low gate

charge and low Qrr.The result is outstanding efficiency

with controlled switching behavior. This universal

technology is well suited for PWM, load switching and general purpose applications.

Features

V_DS

80V

54A

I_D(at V_GS=10V)

< 14mΩ

< 18mΩ

_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS= 7V)

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

V_GS

I_D

I_DM

I_DSM

±25

Gate-Source Voltage

Continuous Drain

Current ^G

T_C=25°C

T_C=100°C

Pulsed Drain Current ^C

160

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Avalanche energy L=0.1mH ^C

I_AS, I_AR

E_AS, E_AR

100

150

T_C=25°C

P_D

Power Dissipation ^B

Power Dissipation ^A

T_C=100°C

T_A=25°C

T_A=70°C

3.1

P_DSM

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

Steady-State

R_θJC

0.8

1/7

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